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| Part Number | BC237 |
| Distributor | Stock | Price | Buy |
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| Part Number | BC237 |
| Manufacturer | ON |
| Title | Amplifier Transistors |
| Description | www.DataSheet4U.com BC237, BC237B, BC237C, BC239C Amplifier Transistors NPN Silicon Features http://onsemi.com COLLECTOR 1 2 BASE Symbol VCEO BC237 BC239 Collector −Emitter Voltage BC237 BC239 Collector −Emitter Voltage BC237 BC239 Collector Current − Continuous Total Power Dissipation @ TA = 25°C . |
| Features | http://onsemi.com COLLECTOR 1 2 BASE Symbol VCEO BC237 BC239 Collector −Emitter Voltage BC237 BC239 Collector −Emitter Voltage BC237 BC239 Collector Current − Continuous Total Power Dissipation @ TA = 25°C Derate above TA = 25°C Total Power Dissipation @ TA = 25°C Derate above TA = 25°C Operating and Storage Temperature Range IC PD PD TJ, Tstg VEBO 6.0 5.0 100 350 2.8 1.0 8.0 −55 to +150 mAdc mW m. |
| Part Number | BC237 |
| Manufacturer | CDIL |
| Title | NPN Silicon Transistor |
| Description | SYMBOL Collector Emitter Voltage VCEO Collector Emitter Voltage Emitter Base Voltage VCES VEBO Collector Current Continuous IC Power Dissipation at Ta=25ºC PD Derate Above 25ºC Power Dissipation at Tc=25ºC PD Derate Above 25ºC Operating And Storage Junction Temperature Range Tj, Tstg . |
| Features | . |
| Part Number | BC237 |
| Manufacturer | Micro Electronics |
| Title | NPN Silicon Transistor |
| Description | . |
| Features | . |
| Part Number | BC237 |
| Manufacturer | KEC |
| Title | EPITAXIAL PLANAR NPN TRANSISTOR |
| Description | SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. LOW NOISE AMPLIFIER APPLICATION. FEATURES High Voltage : BC237 VCEO=45V. Low Noise : BC239 NF=0.2dB(Typ.), 3dB(Max.) (VCE=6V, IC=0.1mA, f=1kHz). For Complementary With PNP type BC307/308/309. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC BC237 C. |
| Features | High Voltage : BC237 VCEO=45V. Low Noise : BC239 NF=0.2dB(Typ.), 3dB(Max.) (VCE=6V, IC=0.1mA, f=1kHz). For Complementary With PNP type BC307/308/309. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC BC237 Collector-Base Voltage BC238 BC239 BC237 Collector-Emitter Voltage BC238 BC239 BC237 Emitter-Base Voltage BC238 BC239 BC237 Collector Current BC238 BC239 BC237 Emitter Current BC238 B. |
| Part Number | BC237 |
| Manufacturer | Philipss |
| Title | NPN Transistor |
| Description | NPN transistor in a TO-92; SOT54 plastic package. PNP complements: BC307; BC307B. PINNING PIN 1 2 3 emitter base collector BC237; BC237B DESCRIPTION 1 handbook, halfpage 2 3 3 2 1 MAM182 Fig.1 Simplified outline (TO-92; SOT54) and symbol. QUICK REFERENCE DATA SYMBOL VCBO VCEO ICM Ptot hFE P. |
| Features |
• Low current (max. 100 mA) • Low voltage (max. 45 V). APPLICATIONS • General purpose switching and amplification. DESCRIPTION NPN transistor in a TO-92; SOT54 plastic package. PNP complements: BC307; BC307B. PINNING PIN 1 2 3 emitter base collector BC237; BC237B DESCRIPTION 1 handbook, halfpage 2 3 3 2 1 MAM182 Fig.1 Simplified outline (TO-92; SOT54) and symbol. QUICK REFERENCE DATA SYMB. |
| Part Number | BC237 |
| Manufacturer | SEMTECH |
| Title | NPN Silicon Transistor |
| Description | BC237...BC239 NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications The transistor is subdivided into three groups, A, B, and C, according to its DC current gain. Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base. |
| Features | . |
| Part Number | BC237 |
| Manufacturer | Motorola |
| Title | Amplifier Transistors |
| Description | MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors Order this document by BC237/D NPN Silicon COLLECTOR 1 2 BASE 3 EMITTER BC237,A,B,C BC238B,C BC239,C MAXIMUM RATINGS Rating Collector – Emitter Voltage Collector – Emitter Voltage Emitter – Base Voltage Collector Current — Continuous T. |
| Features |
= 2.0 mA, IB = 0) Emitter – Base Breakdown Voltage (IE = 100 mA, IC = 0) Collector Cutoff Current (VCE = 30 V, VBE = 0) BC237 BC238 BC239 BC237 BC238 BC239 BC238 BC239 BC237 BC238 BC239 BC237 V(BR)CEO 45 25 25 6.0 5.0 5.0 — — — — — — — — — — — — 0.2 0.2 0.2 0.2 0.2 0.2 — — — — — — 15 15 15 4.0 4.0 4.0 µA V V(BR)EBO V ICES nA (VCE = 50 V, VBE = 0) (VCE = 30 V, VBE = 0) TA = 125°C (VCE = 50 V, V. |
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