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| Part Number | BBY55-03W |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | BBY55-03W |
| Manufacturer | Infineon |
| Title | Silicon Tuning Diode |
| Description | Silicon Tuning Diodes • Excellent linearity • High Q hyperabrupt tuning diode • Low series resistance • Designed for low tuning voltage operation for VCO's in mobile communications equipment • Very low capacitance spread • Pb-free (RoHS compliant) package BBY55... BBY55-02V BBY55-02W BBY55-03W . |
| Features | , f = 1 MHz VR = 10 V, f = 1 MHz CT 17.5 18.6 19.6 14 15 16 11.6 12.6 13.6 10 11 12 5.5 6 6.5 Capacitance ratio VR = 2 V, VR = 10 V, f = 1 MHz Series resistance VR = 5 V, f = 470 MHz CT2/CT10 rS 2 2.5 3 - 0.15 0.4 Unit nA pF Ω 2 2011-06-15 BBY55... Diode capacitance CT = ƒ (VR) f = 1MHz Capacitance change ∆C = ƒ(TA) f = 1 MHz rs CT IR ∆C 30 pF 24 22 20 18 16 14 12 10 8 6 4 2 00 2 4 6 8 . |
similar datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | BBY55-02V |
Infineon |
Silicon Tuning Diode |
|
| 2 | BBY55-02W |
Siemens Group |
Silicon Tuning Diode (Excellent linearity High Q hyperabrupt tuning diode Low series inductance) |
|
| 3 | BBY55-02W |
Infineon |
Silicon Tuning Diode |
|
| 4 | BBY55 |
Infineon Technologies AG |
Silicon Tuning Diodes |
|
| 5 | BBY51 |
Siemens Group |
Silicon Tuning Diode (High Q hyperabrupt dual tuning diode Designed for low tuning voltage operation) |
|
| 6 | BBY51 |
Infineon Technologies AG |
Silicon Tuning Diode |
|
| 7 | BBY51-02L |
Infineon |
Silicon Tuning Diode |
|
| 8 | BBY51-02V |
Infineon |
Silicon Tuning Diode |
|
| 9 | BBY51-02W |
Infineon |
Silicon Tuning Diode |
|
| 10 | BBY51-03W |
Infineon |
Silicon Tuning Diode |
|
Desde 2024. D4U Semiconductor.
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