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| Part Number | BAW56S |
| Distributor | Stock | Price | Buy |
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| Part Number | BAW56S |
| Manufacturer | NXP |
| Title | High-speed switching diodes |
| Description | High-speed switching diodes, encapsulated in small Surface-Mounted Device (SMD) plastic packages. Table 1. Product overview Type number Package NXP JEITA BAV756S SOT363 SC-88 BAW56 BAW56M SOT23 SOT883 SC-101 BAW56S SOT363 SC-88 BAW56T BAW56W SOT416 SOT323 SC-75 SC-70 JEDEC - Package . |
| Features | and benefits High switching speed: trr 4 ns Low leakage current Small SMD plastic packages Low capacitance: Cd 2 pF Reverse voltage: VR 90 V AEC-Q101 qualified 1.3 Applications High-speed switching General-purpose switching 1.4 Quick reference data Table 2. Quick reference data Symbol Parameter Per diode IR reverse current VR reverse voltage trr reverse recovery time Con. |
| Part Number | BAW56S |
| Manufacturer | Siemens Group |
| Title | Silicon Switching Diode Array |
| Description | BAW 56S Silicon Switching Diode Array • For high-speed switching applications • Common anode • Internal (galvanic) isolated Diodes in one package 4 5 6 2 1 3 VPS05604 Type BAW 56S Marking Ordering Code A1s Q62702-A1253 Pin Configuration Package 1/4 = C1 2/5 = C2 3/6 = A1/2 SOT-363 Maximum R. |
| Features | ) = 100 µA Forward voltage I F = 1 mA I F = 10 mA I F = 50 mA I F = 150 mA Reverse current - - 715 855 1000 1250 2.5 µA nA IR IR - VR = 70 V Reverse current VR = 25 V, TA = 150 °C VR = 70 V, TA = 150 °C AC characteristics Diode capacitance - - 30 50 CD trr - - 1.5 6 pF ns VR = 0 V, f = 1 MHz Reverse recovery time I F = 10 mA, I R = 10 mA, R L = 100 Ω, measured at IR = 1mA Test c. |
| Part Number | BAW56S |
| Manufacturer | Infineon Technologies AG |
| Title | Silicon Switching Diode |
| Description | BAW56... Silicon Switching Diode • For high-speed switching applications • Common anode configuration BAW56 BAW56T BAW56W ! BAW56S BAW56U $ # , " " , ! , , , , ! Type BAW56 BAW56S BAW56T BAW56U BAW56W Package SOT23 SOT363 SC75 SC74 SOT323 Configuration common anode double common an. |
| Features | please refer to Application Note Thermal Resistance 2 Jun-03-2003 BAW56... Electrical Characteristics at TA = 25°C, unless otherwise specified Symbol Values Parameter min. typ. max. DC Characteristics 85 Breakdown voltage V(BR) I(BR) = 100 µA Reverse current VR = 70 V VR = 25 V, TA = 150 °C VR = 70 V, TA = 150 °C Forward voltage IF = 1 mA IF = 10 mA IF = 50 mA IF = 100 mA IF = 150 mA VF 715 85. |
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