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| Part Number | BAR81W |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | BAR81W |
| Manufacturer | Infineon Technologies AG |
| Title | Silicon RF Switching Diode |
| Description | BAR81... Silicon RF Switching Diode Designed for use in shunt configuration in high performance RF switches High shunt signal isolation Low shunt insertion loss Optimized for short - open transformation using lines BAR81W 4 3 1 2 Type BAR81W Package SOT343 Configuration single sh. |
| Features | rward voltage IF = 100 mA AC Characteristics Diode capacitance VR = 1 V, f = 1 MHz VR = 3 V, f = 1 MHz Forward resistance IF = 5 mA, f = 100 MHz Charge carrier life time IF = 10 mA, IR = 6 mA, measured at IR = 3 mA, RL = 100 I-region width Shunt insertion loss1) VR = 3 V, f = 1.89 GHz Shunt isolation1) IF = 10 mA , f = 1.89 GHz Configuration of the shunt-diode - A perfect ground is essential for. |
similar datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | BAR81 |
Siemens Semiconductor Group |
Preliminary data Silicon RF Switching Diode (Design for use in shunt configuration High shunt signal isolation Low shunt insertion loss) |
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| 2 | BAR81 |
Infineon Technologies AG |
Silicon RF Switching Diodes |
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| 3 | BAR80 |
Siemens Semiconductor Group |
Silicon RF Switching Diode (Design for use in shunt configuration Hight shunt signal isolation Low shunt insertion loss) |
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| 4 | BAR80 |
Infineon Technologies AG |
Silicon RF Switching Diode |
|
| 5 | BAR88 |
Infineon Technologies AG |
Silicon PIN Diode |
|
| 6 | BAR88-02L |
Infineon Technologies AG |
Silicon PIN Diode |
|
| 7 | BAR88-02V |
Infineon Technologies AG |
Silicon PIN Diode |
|
| 8 | BAR88-07L4 |
Infineon Technologies AG |
Silicon PIN Diode |
|
| 9 | BAR88-099L4 |
Infineon Technologies AG |
Silicon PIN Diode |
|
| 10 | BAR89 |
Infineon Technologies AG |
Silicon PIN Diode |
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Desde 2024. D4U Semiconductor.
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