BAR63-03W |
Part Number | BAR63-03W |
Manufacturer | Infineon (https://www.infineon.com/) Technologies AG |
Description | BAR63... Silicon PIN Diodes PIN diode for high speed switching of RF signals Very low forward resistance (low insertion loss) Very low capacitance (high isolation) For frequencies up to 3GHz BAR63-02.. BAR63-03W BAR63-04 BAR63-04W 3 BAR63-05 BAR63-05W 3 BAR63-06 BAR63-06W 3 BAR63-07L4 4 3 1 2 D 1 D 2 D 1 D 2 D 1 D 2 D 1 D 2 1 2 1. |
Features | 02L, TS 118°C BAR63-02V, -02W, BAR63-03W, TS 115°C BAR63-04...BAR63-06, TS BAR63-04S, TS 115°C BAR63-04W...BAR63-06W, TS 105°C BAR63-07L4, TS tbd Junction temperature Operating temperature range Storage temperature Thermal Resistance Parameter Junction - soldering point1) BAR63-02L BAR63-02V, BAR63-02W BAR63-03W BAR63-04...BAR63-06 BAR63-04S BAR63-04W...BAR63-06W BAR63-07L4 1For Symbol VR IF Ptot Value 50 100 250 250 250 250 250 250 150 -55 ... 125 -55 ... 150 Unit V mA mW 55°C Tj Top Tstg Symbol RthJS °C Value Unit K/W 125 140 155 380 180 180 tbd calcula. |
Datasheet |
BAR63-03W Data Sheet
PDF 497.66KB |
Distributor | Stock | Price | Buy |
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BAR63-03W |
Part Number | BAR63-03W |
Manufacturer | Siemens Semiconductor Group |
Title | Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Description | BAR 63-03W Silicon PIN Diode l PIN diode for high speed switching of RF signals l Low forward resistance l Very low capacitance l For frequencies up to 3 GHz Type BAR 63-03W Marking G Ordering Code (tape and reel) Q62702-A1025 Pin Configuration Package 1 2 A C SOD-323 1) Maximum Ratings Parameter. |
Features | 0 V, f = 100 MHz Diode capacitance VR = 5 V, f = 1 MHz Forward resistance IF = 5 mA, f = 100 MHz IF = 10 mA, f = 100 MHz Charge carrier lifetime IF = 10 mA, IR = 6 mA, IR = 3 mA Series inductance V(BR) 50 0.95 0.3 0.21 1.2 1 75 2.0 - V nA 50 V 1.2 pF pF 0.3 Ω 2 ns nH - IR VF CT CT rf τL Ls Semiconductor Group 2 Edition A01, 22.07.94 BAR 63-03W Diode capacitance CT = f (VR) f = 1 MHz Forw. |
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | BAR63-03 |
Siemens Semiconductor Group |
Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) | |
2 | BAR63-02L |
Infineon Technologies AG |
Silicon PIN Diodes | |
3 | BAR63-02V |
Infineon Technologies AG |
Silicon PIN Diodes | |
4 | BAR63-02W |
Siemens Semiconductor Group |
Silicon PIN Diode (PIN diode for high speed switching of RF signals/ Low forward resistance/ small capacitance small inductance) | |
5 | BAR63-02W |
Infineon Technologies AG |
Silicon PIN Diodes | |
6 | BAR63-04 |
Siemens Semiconductor Group |
Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) | |
7 | BAR63-04 |
Infineon Technologies AG |
Silicon PIN Diodes | |
8 | BAR63-04W |
Siemens Semiconductor Group |
Silicon PIN Diode (PIN diode for high speed switching of RF signal Low forward resistance Very low capacitance For frequencies up to 3 GHz) | |
9 | BAR63-04W |
Infineon Technologies AG |
Silicon PIN Diodes | |
10 | BAR63-05 |
Siemens Semiconductor Group |
Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) |