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B80NF10 |
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| Part Number | B80NF10 |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | This Power MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced highefficiency isolated DC-DC converters for telecom and computer application. It is also intended for any application with low gate charge drive. |
| Features |
Type
STP80NF10 STB80NF10
VDSS
100 V 100 V
RDS(on) max
< 0.015 Ω
< 0.015 Ω
■ Exceptional dv/dt capability ■ 100% Avalanche tested ■ Application oriented characterization ID 80 A 80 A Applications ■ Switching applications Description This Power MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced highefficiency isolated DC-DC converters for telecom and computer application. It is also intended for any application with low gate charge drive . |
| Datasheet |
 B80NF10 Data Sheet
PDF 558.82KB |
| Distributor | Stock | Price | Buy |
|---|
B80NF10 |
| Part Number | B80NF10 |
| Manufacturer | VBsemi |
| Title | N-Channel MOSFET |
| Description | B80NF10-VB B80NF10-VB Datasheet N-Channel 100-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.010 at VGS = 10 V 100 0.023 at VGS = 4.5 V ID (A) 100 85 FEATURES • TrenchFET® Power MOSFET • 175 °C Maximum Junction Temperature • Compliant to RoHS Directive 2002/95/EC TO-263. |
| Features |
• TrenchFET® Power MOSFET • 175 °C Maximum Junction Temperature • Compliant to RoHS Directive 2002/95/EC TO-263 G DS Top View D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Limit Unit Drain-Source Voltage Gate-Source Voltage VDS 100 V VGS ± 20 Continuous Drain Current (TJ = 150 °C) TC = 25 °C TC = 125 °C 100 ID 75 a A Pulsed . |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | B80NF06 |
STMicroelectronics |
N-CHANNEL POWER MOSFET |
|
| 2 | B80NF55-06 |
STMicroelectronics |
N-CHANNEL POWER MOSFET |
|
| 3 | B80NF55-06T |
STMicroelectronics |
N-CHANNEL POWER MOSFET |
|
| 4 | B80NF55-08 |
STMicroelectronics |
N-CHANNEL POWER MOSFET |
|
| 5 | B80NF55L-08 |
STMicroelectronics |
N-CHANNEL Power MOSFET |
|
| 6 | B80-C1000 |
EIC discrete Semiconductors |
SILICON BRIDGE RECTIFIERS |
|
| 7 | B80-C1500R |
EIC discrete Semiconductors |
SILICON BRIDGE RECTIFIERS |
|
| 8 | B800 |
Renesas |
2SB800 |
|
| 9 | B804 |
Renesas |
2SB804 |
|
| 10 | B805 |
Renesas |
2SB805 |
|
Desde 2024. D4U Semiconductor.
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