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B772 PNP Silicon Transistor

B772


B772
Part Number B772
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B772

STMicroelectronics
B772
Part Number B772
Manufacturer STMicroelectronics
Title PNP MEDIUM POWER TRANSISTOR
Description The device is a PNP transistor manufactured by using planar Technology resulting in rugged high performance devices. The complementary NPN type is 2SD882. 1 2 3 SOT-32 (TO-126) Figure 1. Internal schematic diagram Table 1. Device summary Order code 2SB772 Marking B772 Package SOT-32 Packing Tub.
Features
■ High current
■ Low saturation voltage
■ Complement to 2SD882 Applications
■ Voltage regulation
■ Relay driver
■ Generic switch
■ Audio power amplifier
■ DC-DC converter Description The device is a PNP transistor manufactured by using planar Technology resulting in rugged high performance devices. The complementary NPN type is 2SD882. 1 2 3 SOT-32 (TO-126) Figure 1. Internal schematic diagram T.

B772

SeCoS
B772
Part Number B772
Manufacturer SeCoS
Title PNP Transistor
Description Elektronische Bauelemente B772 -3A , -40V PNP Plastic Encapsulated Transistor FEATURES  Low frequency power amplifier  High Current  Low Speed Switching RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free CLASSIFICATION OF hFE Product-Rank B772-R Range 60~120 B772-O 100.
Features
 Low frequency power amplifier
 High Current
 Low Speed Switching RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free CLASSIFICATION OF hFE Product-Rank B772-R Range 60~120 B772-O 100~200 B772-Y 160~320 B772-GR 200~400 TO-126 Emitter Collector
Base A E F N L M K B H J C D G REF. A B C D E F G Millimeter Min. Max. 7.40 7.80 2.50 2.90 10.60 11.00 15.30 15.70 3.

B772

JCST
B772
Part Number B772
Manufacturer JCST
Title PNP Transistor
Description JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors B772 TRANSISTOR (PNP) FEATURES Low Speed Switching TO-126 1. EMITTER 2. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) 3 BASE Symbol Parameter VCBO Collector-Base Voltage VCEO Collector-Emi.
Features Low Speed Switching TO-126 1. EMITTER 2. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) 3 BASE Symbol Parameter VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current -Continuous PC Collector Power Dissipation RӨJA Thermal Resistance from Junction to Ambient Tj Junction Temperature Tstg Storage Temperature Value -40 -30.

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