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| Part Number | AS29F040 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | AS29F040 |
| Manufacturer | Alliance Semiconductor |
| Title | 5V 512K x 8 CMOS FLASH EEPROM |
| Description | Selected by A9 = VID(11.5–12.5V), CE = OE = A1 = A6 = L, enabling outputs. When A0 is low (VIL) the output data = 52h, a unique Mfr. code for Alliance Semiconductor Flash products. When A0 is high (VIH), DOUT represents the device code for the AS29F040. Selected with CE = OE = L, WE = H. Data is val. |
| Features | single 5.0V power supply operation for read, write, and erase functions. Internally generated and regulate voltages are provided for the program and erase operations. A low VCC detector automatically inhibits write operations during power transtitions. DATA polling of DQ7 or toggle bit (DQ6) may be used to detect end-of-program or erase operations. The device automatically resets to read mode afte. |
| Part Number | AS29F040 |
| Manufacturer | Micross |
| Title | 512K x 8 FLASH |
| Description | 512K x 8 FLASH UNIFORM SECTOR 5.0V FLASH MEMORY AVAILABLE AS MILITARY SPECIFICATIONS • MIL-STD-883 • SMD 5962-96692 FEATURES • Single 5.0V ±10% power supply operation • Fastest access times: 55, 60, 70, 90, 120, & 150ns • Low power consumption: 3 20 mA typical active read current 3 30 mA typical pro. |
| Features |
• Single 5.0V ±10% power supply operation • Fastest access times: 55, 60, 70, 90, 120, & 150ns • Low power consumption: 3 20 mA typical active read current 3 30 mA typical program/erase current 3 1 μA typical standby current (standard access time to active mode) • Flexible sector architecture 3 Eight uniform 64 Kbyte each 3 Any combination of sectors can be erased 3 Supports full chip erase • Sect. |
similar datasheet
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|---|---|---|---|---|
| 1 | AS29F010 |
Alliance Semiconductor |
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|
| 2 | AS29F010 |
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| 3 | AS29F010 |
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|
| 4 | AS29F200 |
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|
| 5 | AS2916 |
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| 6 | AS2916 |
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| 7 | AS29372 |
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| 8 | AS29372 |
Austin Semiconductor |
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| 9 | AS2950 |
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| 10 | AS2951 |
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|
Desde 2024. D4U Semiconductor.
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