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| Part Number | APT5017BVR |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | APT5017BVR |
| Manufacturer | Advanced Power Technology |
| Title | Power MOSFET |
| Description | APT5017BVR 500V 30A 0.170Ω POWER MOS V ® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through opti. |
| Features | Repetitive) 1 Repetitive Avalanche Energy Single Pulse Avalanche Energy 1300 STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS ID(on) RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) On State Drain Current 2 MIN TYP MAX UNIT Volts Amps 500 30 0.170 25 250 ±100 2 4 (VDS > I D(on) x R DS(on) Max, VGS = 10V) 2 Drain-Source On-Sta. |
similar datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | APT5017BVFR |
Advanced Power Technology |
Power MOSFET |
|
| 2 | APT5017BVFR |
INCHANGE |
N-Channel MOSFET |
|
| 3 | APT5017BLC |
Advanced Power Technology |
Power MOSFET |
|
| 4 | APT5017SLC |
Advanced Power Technology |
Power MOSFET |
|
| 5 | APT5017SVR |
Advanced Power Technology |
Power MOSFET |
|
| 6 | APT5010B2 |
Advanced Power Technology |
Power MOSFET |
|
| 7 | APT5010B2FLL |
Advanced Power Technology |
Power MOSFET |
|
| 8 | APT5010B2FLL |
INCHANGE |
N-Channel MOSFET |
|
| 9 | APT5010B2LC |
Advanced Power Technology |
high voltage N-Channel enhancement mode power MOSFET |
|
| 10 | APT5010B2LL |
Advanced Power Technology |
Power MOSFET |
|
Desde 2024. D4U Semiconductor.
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