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AOWF11S65 |
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| Part Number | AOWF11S65 |
| Manufacturer | Alpha & Omega Semiconductors |
| Description | The AOW11S65 & AOWF11S65 have been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications. By providing low RDS(on), Qg and EOSS along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. P. |
| Features |
Peak diode recovery dv/dt H Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds J Thermal Characteristics Parameter Maximum Junction-to-Ambient A,D TC=25° C TC=100° C VGS ID IDM IAR EAR EAS PD dv/dt TJ, TSTG TL Symbol RθJA AOW11S65 65 0.5 0.63 198 1.6 11 8
AOWF11S65 650 ±30 11 * 8 * 45 2 60 120 28 0.22 Units V V A A mJ mJ W W/ oC V/ns ° C ° C 100 20 -55 to 150 300 AOWF11S65 65 -4.5 Units ° C/W ° C/W ° C/W RθCS Maximum Case-to-sink A Maximum Junction-to-Case RθJC * Drain current limited by maximum junction temperature. Rev0: D. |
| Datasheet |
 AOWF11S65 Data Sheet
PDF 281.40KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | AOWF11S60 |
Alpha & Omega Semiconductors |
Power Transistor |
|
| 2 | AOWF10N60 |
Alpha & Omega Semiconductors |
10A N-Channel MOSFET |
|
| 3 | AOWF10N65 |
Alpha & Omega Semiconductors |
10A N-Channel MOSFET |
|
| 4 | AOWF125A60 |
Alpha & Omega Semiconductors |
N-Channel Power Transistor |
|
| 5 | AOWF12N50 |
Alpha & Omega Semiconductors |
12A N-Channel MOSFET |
|
| 6 | AOWF12N60 |
Alpha & Omega Semiconductors |
12A N-Channel MOSFET |
|
| 7 | AOWF12N65 |
Alpha & Omega Semiconductors |
12A N-Channel MOSFET |
|
| 8 | AOWF14N50 |
Alpha & Omega Semiconductors |
14A N-Channel MOSFET |
|
| 9 | AOWF15S60 |
Alpha & Omega Semiconductors |
POWER Transistor |
|
| 10 | AOWF15S65 |
Alpha & Omega Semiconductors |
Power Transistor |
|
Desde 2024. D4U Semiconductor.
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