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AOW360A70 |
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| Part Number | AOW360A70 |
| Manufacturer | Alpha & Omega Semiconductors |
| Description | • Proprietary aMOS5TM technology • Low RDS(ON) • Optimized switching parameters for better EMI performance • Enhanced body diode for robustness and fast reverse recovery Product Summary VDS @ Tj,max IDM RDS(ON),max Qg,typ Eoss @ 400V Applications • Flyback for SMPS • Charger ,PD Adapter, TV, lighting. 100% UIS Tested 100% Rg Tested TO-262 Top View Bott. |
| Features |
alanche energy G
MOSFET dv/dt ruggedness Peak diode recovery dv/dt
VDS VGS VGS
ID
IDM IAR EAR EAS
dv/dt
700 ±20 ±30 12 7.6 48 3.4 5.8 50 100 20
TC=25°C Power Dissipation B Derate above 25°C
PD
156 1.25
AOWF360A70
12 * 7.6 * 29.5 0.23 Units V V V A A mJ mJ V/ns W W/°C Junction and Storage Temperature Range TJ, TSTG -55 to 150 °C Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds TL 300 °C Thermal Characteristics Parameter Symbol Maximum Junction-to-Ambient A,D RqJA Maximum Case-to-sink A RqCS Maximum Junction-to-Case RqJC * Drain current limite. |
| Datasheet |
 AOW360A70 Data Sheet
PDF 653.86KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | AOW10N60 |
INCHANGE |
N-Channel MOSFET |
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| 2 | AOW10N60 |
Alpha & Omega Semiconductors |
10A N-Channel MOSFET |
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| 3 | AOW10N65 |
INCHANGE |
N-Channel MOSFET |
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| 4 | AOW10N65 |
Alpha & Omega Semiconductors |
10A N-Channel MOSFET |
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| 5 | AOW11N60 |
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11A N-Channel MOSFET |
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| 6 | AOW11N60 |
INCHANGE |
N-Channel MOSFET |
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| 7 | AOW11S60 |
Alpha & Omega Semiconductors |
Power Transistor |
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| 8 | AOW11S60 |
INCHANGE |
N-Channel MOSFET |
|
| 9 | AOW11S65 |
Alpha & Omega Semiconductors |
Power Transistor |
|
| 10 | AOW11S65 |
INCHANGE |
N-Channel MOSFET |
|
Desde 2024. D4U Semiconductor.
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