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AOTF25S65L N-Channel MOSFET

AOTF25S65L

AOTF25S65L
AOTF25S65L AOTF25S65L
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Part Number AOTF25S65L
Manufacturer INCHANGE
Description ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 650 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 25 A IDM Drain Current-Single Pluse 104 A PD Total Dissipation @TC=25℃ 40 W TJ Max. Operat.
Features
·Drain Current
  –ID= 25A@ TC=25℃
·Drain Source Voltage- : VDSS= 650V(Min)
·Static Drain-Source On-Resistance : RDS(on) = 0.19Ω(Max)
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION
·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 650 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 25 A IDM Drain Current-Single Pluse 104 A PD Total Dissipation @TC=25℃ 40 W TJ .
Datasheet Datasheet AOTF25S65L Data Sheet
PDF 246.23KB
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AOTF25S65L

Alpha & Omega Semiconductors
AOTF25S65L
Part Number AOTF25S65L
Manufacturer Alpha & Omega Semiconductors
Title Power Transistor
Description Product Summary The AOT25S65 & AOB25S65 & AOTF25S65 & AOTF25S65L have been fabricated using the advanced aMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications. By providing low RDS(on), Qg and EOSS along with guaranteed avalanch.
Features EAR Single pulsed avalanche energy G EAS 25 25* 16 16* 104 7 96 750 TC=25°C Power Dissipation B Derate above 25oC PD 357 50 2.9 0.4 MOSFET dv/dt ruggedness Peak diode recovery dv/dt H dv/dt 100 20 Junction and Storage Temperature Range TJ, TSTG -55 to 150 Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds J TL 300 Thermal Characteristics Para.


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