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AOT42S60L 600V Power Transistor Datasheet


AOT42S60L

Alpha & Omega Semiconductors
AOT42S60L
Part Number AOT42S60L
Manufacturer Alpha & Omega Semiconductors
Title Transistor: N-MOSFET; unipolar; 600V; 23A; 417W; TO220
Description Product Summary The AOT42S60L & AOB42S60L have been fabricated using the advanced aMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications. By providing low RDS(on), Qg and EOSS along with guaranteed avalanche capability these devi...
Features d Drain Current C IDM Avalanche Current C IAR Repetitive avalanche energy C EAR Single pulsed avalanche energy G EAS 37 23 166 11 234 1345 TC=25°C Power Dissipation B Derate above 25oC PD 417 3.3 MOSFET dv/dt ruggedness Peak diode recovery dv/dt H dv/dt 100 20 Junction and Storage Temperature Range TJ, TSTG -55 to 150 Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds J TL 300 Thermal Characteristics Parameter Maximum Junction-to-Ambient A,D Maximum Case-to-sink A Symbol RqJA RqCS AOT42S60L/AOB42S60L 65 0.5 Maximum Junction-to-Case RqJC 0.3...

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Stock 97 In Stock
Price
250 units: 3.82 USD
100 units: 4.1 USD
25 units: 4.56 USD
5 units: 5.16 USD
1 units: 5.73 USD
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INCHANGE
AOT42S60
Part Number AOT42S60
Manufacturer INCHANGE
Title N-Channel MOSFET
Description isc N-Channel MOSFET Transistor AOT42S60 ·FEATURES ·Drain Current –ID= 37A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source.
Features
·Drain Current
  –ID= 37A@ TC=25℃
·Drain Source Voltage- : VDSS= 600V(Min)
·Static Drain-Source On-Resistance : RDS(on) = 109mΩ(Max)
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device performance and reliable operation
·DESCRITION
·Be suitable for synchronous rectification for se.

Document AOT42S60 datasheet pdf


Alpha & Omega Semiconductors
AOT42S60
Part Number AOT42S60
Manufacturer Alpha & Omega Semiconductors
Title Power Transistor
Description Product Summary The AOT42S60 & AOB42S60 have been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high lev.
Features DM Avalanche Current C IAR Repetitive avalanche energy C EAR Single pulsed avalanche energy G EAS 37 23 166 11 234 1345 TC=25°C Power Dissipation B Derate above 25oC PD 417 3.3 MOSFET dv/dt ruggedness 100 Peak diode recovery dv/dt H dv/dt 20 Junction and Storage Temperature Range TJ.

Document AOT42S60 datasheet pdf



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