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AOT11S65L |
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| Part Number | AOT11S65L |
| Manufacturer | Alpha & Omega Semiconductors |
| Description | Product Summary The AOT11S65L & AOB11S65L & AOTF11S65L & AOTF11S65 have been fabricated using the advanced aMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications. By providing low RDS(on), Qg and EOSS along with guaranteed avalanche capability these parts can be adopted quickly into new a. |
| Features |
urrent C
IAR
2
Repetitive avalanche energy C
EAR
60
Single pulsed avalanche energy G
EAS
120
TC=25°C Power Dissipation B Derate above 25oC
PD
198
39
1.6
0.31
MOSFET dv/dt ruggedness Peak diode recovery dv/dt H
dv/dt
100 20
Junction and Storage Temperature Range TJ, TSTG
-55 to 150
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds J TL
300
Thermal Characteristics
Parameter Maximum Junction-to-Ambient A,D Maximum Case-to-sink A
Symbol RqJA RqCS
AOT11S65L/AOB11S65L 65 0.5
AOTF11S65 65 --
Maximum Junction-to-Case
RqJC
0.63
3.25
* Drain cur. |
| Datasheet |
 AOT11S65L Data Sheet
PDF 575.74KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | AOT11S65 |
Freescale |
Power Transistor |
|
| 2 | AOT11S65 |
Alpha & Omega Semiconductors |
Power Transistor |
|
| 3 | AOT11S65 |
INCHANGE |
N-Channel MOSFET |
|
| 4 | AOT11S60 |
Alpha & Omega Semiconductors |
Power Transistor |
|
| 5 | AOT11S60L |
INCHANGE |
N-Channel MOSFET |
|
| 6 | AOT11S60L |
Alpha & Omega Semiconductors |
Power Transistor |
|
| 7 | AOT1100L |
Alpha & Omega Semiconductors |
100V N-CHANNEL MOSFET |
|
| 8 | AOT1100L |
INCHANGE |
N-Channel MOSFET |
|
| 9 | AOT11C60 |
Alpha & Omega Semiconductors |
11A N-Channel MOSFET |
|
| 10 | AOT11N60 |
Alpha & Omega Semiconductors |
11A N-Channel MOSFET |
|
Desde 2024. D4U Semiconductor.
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