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AOI360A70 |
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| Part Number | AOI360A70 |
| Manufacturer | Alpha & Omega Semiconductors |
| Description | • Proprietary aMOS5TM technology • Low RDS(ON) • Optimized switching parameters for better EMI performance • Enhanced body diode for robustness and fast reverse recovery Applications • Flyback for SMPS • Charger,PD Adapter,TV,lighting Product Summary VDS @ Tj,max IDM RDS(ON),max Qg,typ Eoss @ 400V 100% UIS Tested 100% Rg Tested 800V 48A < 0.36Ω 22.5nC 2.8m. |
| Features | rgy C Single pulsed avalanche energy H MOSFET dv/dt ruggedness Peak diode recovery dv/dt VGS ID IDM IAR EAR EAS dv/dt TC=25°C Power Dissipation B Derate above 25°C PD Maximum 700 ±20 ±30 12 7.6 48 3.4 5.8 50 100 20 138 1.1 Units V V V A A mJ mJ V/ns W W/°C Junction and Storage Temperature Range TJ, TSTG -55 to 150 °C Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds TL 300 °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A,D Maximum Case-to-sink A Maximum Junction-to-CaseD,F Symbol RqJA RqCS RqJC Typical 45 0.7 Maximum 55 0.5 0.9 . |
| Datasheet |
 AOI360A70 Data Sheet
PDF 667.15KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | AOI11S60 |
INCHANGE |
N-Channel MOSFET |
|
| 2 | AOI11S60 |
Alpha & Omega Semiconductors |
Power Transistor |
|
| 3 | AOI1N60 |
Alpha & Omega Semiconductors |
1.3A N-Channel MOSFET |
|
| 4 | AOI1N60 |
INCHANGE |
N-Channel MOSFET |
|
| 5 | AOI208 |
INCHANGE |
N-Channel MOSFET |
|
| 6 | AOI21357 |
Alpha & Omega Semiconductors |
P-Channel MOSFET |
|
| 7 | AOI2210 |
Alpha & Omega Semiconductors |
200V N-Channel MOSFET |
|
| 8 | AOI2210 |
INCHANGE |
N-Channel MOSFET |
|
| 9 | AOI2606 |
Alpha & Omega Semiconductors |
N-Channel MOSFET |
|
| 10 | AOI2606 |
INCHANGE |
N-Channel MOSFET |
|
Desde 2024. D4U Semiconductor.
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