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AOB600A70L |
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| Part Number | AOB600A70L |
| Manufacturer | Alpha & Omega Semiconductors |
| Description | Product Summary • Proprietary aMOS5TM technology • Low RDS(ON) • Optimized switching parameters for better EMI performance • Enhanced body diode for robustness and fast reverse recovery VDS @ Tj,max IDM RDS(ON),max Qg,typ Eoss @ 400V Applications • Flyback for SMPS • Charger ,PD Adapter, TV, lighting. 100% UIS Tested 100% Rg Tested TO-220 TO-220F Top. |
| Features |
rain Current C
Avalanche Current C L=1mH
Repetitive avalanche energy C
Single pulsed avalanche energy G
MOSFET dv/dt ruggedness Peak diode recovery dv/dt
TC=25°C Power Dissipation B Derate above 25°C
VGS
ID
IDM IAR EAR EAS dv/dt
PD
±30
8.5
8.5 * 5 5 * 34 2.1 2.2 19 100 20 104 27 0.8 0.2 Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds TJ, TSTG TL -55 to 150 300 Units V V V A A mJ mJ V/ns W W/°C °C °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A,D Maximum Case-to-sink A Symbol RqJA RqCS. |
| Datasheet |
 AOB600A70L Data Sheet
PDF 511.73KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | AOB600A70FL |
Alpha & Omega Semiconductors |
N-Channel Power Transistor |
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| 2 | AOB600A60L |
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600V N-Channel Power Transistor |
|
| 3 | AOB66518L |
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| 4 | AOB66613L |
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| 5 | AOB66616L |
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| 6 | AOB66620L |
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| 7 | AOB66914L |
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| 8 | AOB66918L |
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100V N-Channel MOSFET |
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| 9 | AOB66935L |
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100V N-Channel MOSFET |
|
| 10 | AOB095A60L |
Alpha & Omega Semiconductors |
N-Channel Power Transistor |
|
Desde 2024. D4U Semiconductor.
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