| Part Number | AOB42S60L |
| Manufacturer | Alpha & Omega Semiconductors |
| Title | 600V Power Transistor |
| Description | Product Summary The AOT42S60L & AOB42S60L have been fabricated using the advanced aMOSTM high voltage process that is designed to deliver high l... |
| Features |
d Drain Current C
IDM
Avalanche Current C
IAR
Repetitive avalanche energy C
EAR
Single pulsed avalanche energy G
EAS
37 23 166 11 234 1345
TC=25°C Power Dissipation B Derate above 25oC
PD
417 3.3
MOSFET dv/dt ruggedness Peak diode recovery dv/dt H
dv/dt
100 20
Junction and Storage Tem... |
| Datasheet | AOB42S60L pdf datasheet - 524.24KB |
| Part Number | AOB42S60 |
| Manufacturer | Alpha & Omega Semiconductors |
| Title | Power Transistor |
| Description | Product Summary The AOT42S60 & AOB42S60 have been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high lev. |
| Features |
DM
Avalanche Current C
IAR
Repetitive avalanche energy C
EAR
Single pulsed avalanche energy G
EAS
37 23 166 11 234 1345
TC=25°C Power Dissipation B Derate above 25oC
PD
417 3.3
MOSFET dv/dt ruggedness
100
Peak diode recovery dv/dt H
dv/dt
20
Junction and Storage Temperature Range
TJ. |
| Datasheet | AOB42S60 pdf datasheet |
| Part Number | AOB42S60 |
| Manufacturer | INCHANGE |
| Title | N-Channel MOSFET |
| Description | isc N-Channel MOSFET Transistor AOB42S60 ·FEATURES ·Drain Current –ID= 37A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source. |
| Features |
·Drain Current –ID= 37A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 109mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Be suitable for synchronous rectification for se. |
| Datasheet | AOB42S60 pdf datasheet |
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