AO4806 |
Part Number | AO4806 |
Manufacturer | Alpha & Omega Semiconductors |
Description | The AO4806 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. They offer operation over a wide gate drive range from 1.8V to 12V. It is ESD protected. This device is suitable for use as a uni-directional or bi-directional load switch, facilitated by its common-drain configuration. Product Summary VDS (V) = 20V ID = 9.4A (VGS =. |
Features | cteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C t ≤ 10s Steady-State Steady-State Symbol RqJA RqJL Maximum 20 ±12 9.4 7.5 40 2 1.28 -55 to 150 Typ 45 72 34 S1 Max 62.5 110 40 D2 S2 Units V V A W °C Units °C/W °C/W °C/W Rev 4.1: March 2024 www.aosmd.com Page 1 of 4 AO4806 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250mA, VGS=0V 20 IDSS Zero Gate Voltage Drain Current VDS=16V, VGS=0V TJ=55°C IGSS Gate-Source. |
Datasheet |
AO4806 Data Sheet
PDF 364.34KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
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1 | AO4800 |
Alpha & Omega Semiconductors |
30V Dual N-Channel MOSFET | |
2 | AO4800B |
Alpha & Omega Semiconductors |
30V Dual N-Channel MOSFET | |
3 | AO4800BL |
Alpha & Omega Semiconductors |
Dual N-Channel MOSFET | |
4 | AO4801 |
Alpha & Omega Semiconductors |
Dual P-Channel MOSFET | |
5 | AO4801A |
Alpha & Omega Semiconductors |
Dual P-Channel MOSFET | |
6 | AO4802 |
Alpha & Omega Semiconductors |
Dual N-Channel MOSFET | |
7 | AO4802L |
Alpha & Omega Semiconductors |
Dual N-Channel MOSFET | |
8 | AO4803 |
Alpha & Omega Semiconductors |
Dual P-Channel MOSFET | |
9 | AO4803A |
Alpha & Omega Semiconductors |
30V Dual P-Channel MOSFET | |
10 | AO4805 |
Alpha & Omega Semiconductors |
30V Dual P-Channel MOSFET |