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AO3407A 30V P-Channel MOSFET

AO3407A

AO3407A
AO3407A AO3407A
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Part Number AO3407A
Manufacturer Alpha & Omega Semiconductors
Description The AO3407A uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This device is suitable for use as a load switch or in PWM applications. Product Summary VDS ID (at VGS=-10V) RDS(ON) (at VGS=-10V) RDS(ON) (at VGS =-4.5V) -30V -4.3A < 48mΩ < 78mΩ SOT23 Top View Bottom View D D D S G S G G S Absolute Maximum Ratings TA=25.
Features e 1 of 5 AO3407A C unless otherwise noted) Electrical Characteristics (TJ=25° Symbol Parameter Conditions ID=-250µA, VGS=0V VDS=-30V, VGS=0V C TJ=55° VDS=0V, VGS= ±20V VDS=VGS ID=-250µA VGS=-10V, VDS=-5V VGS=-10V, ID=-4.3A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=-4.5V, ID=-3A Forward Transconductance Diode Forward Voltage VDS=-5V, ID=-4.3A IS=-1A,VGS=0V TJ=125° C -1.4 -25 34 52 54 10 -0.7 -1 -2 520 VGS=0V, VDS=-15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 3.5 100 65 7.5 9.2 VGS=-10V, VDS=-15V, ID=-4.3A 4.6 1.6 2.2 7.5 VGS=-10V, VDS=-15V, RL=3.5Ω, RGEN=3Ω IF=-4.3A, dI/dt=100A/µs 5.5 19.
Datasheet Datasheet AO3407A Data Sheet
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AO3407A

VBsemi
AO3407A
Part Number AO3407A
Manufacturer VBsemi
Title P-Channel MOSFET
Description AO3407A-VB AO3407A-VB Datasheet P-Channel 30 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Typ. 0.046 at VGS = - 10 V - 30 0.049 at VGS = - 6 V 0.054 at VGS = - 4.5 V ID (A)a - 5.6 -5 -4.5 Qg (Typ.) 11.4 nC (SOT-23) S TO-236 FEATURES • TrenchFET® Power MOSFET • 100 % Rg Tested APP.
Features
• TrenchFET® Power MOSFET
• 100 % Rg Tested APPLICATIONS
• For Mobile Computing - Load Switch - Notebook Adaptor Switch - DC/DC Converter G1 S2 3D Top View G D P-Channel MOSFET www.VBsemi.com ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) VDS VGS TC = 25 °C TC = 70 °C.


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