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AO3401 |
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| Part Number | AO3401 |
| Manufacturer | Kexin |
| Description | SMD Type P-Channel Enhancement MOSFET AO3401 (KO3401) MOSFET ■ Features ● VDS (V) =-30V ● ID =-4.2 A (VGS =-10V) ● RDS(ON) ＜ 50mΩ (VGS =-10V) ● RDS(ON) ＜ 65mΩ (VGS =-4.5V) ● RDS(ON) ＜ 120mΩ (VGS =-2.5V) D +0.12.4 -0.1 SOT-23 2.9 +0.1 -0.1 0.4 +0.1 -0.1 3 12 0.95 +0.1 -0.1 1.9 +0.1 -0.1 +0.11.3 -0.1 0.55 0.4 Unit: mm 0.1 +0.05 -0.01 +0.10.97 -0.1 . |
| Features |
● VDS (V) =-30V ● ID =-4.2 A (VGS =-10V) ● RDS(ON) ＜ 50mΩ (VGS =-10V) ● RDS(ON) ＜ 65mΩ (VGS =-4.5V) ● RDS(ON) ＜ 120mΩ (VGS =-2.5V) D +0.12.4 -0.1 SOT-23 2.9 +0.1 -0.1 0.4 +0.1 -0.1 3 12 0.95 +0.1 -0.1 1.9 +0.1 -0.1 +0.11.3 -0.1 0.55 0.4 Unit: mm 0.1 +0.05 -0.01 +0.10.97 -0.1 G S 0-0.1 +0.10.38 -0.1 1. Gate 2. Source 3. Drain ■ Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Ta = 25℃ Ta = 70℃ Pulsed Drain Current Power Dissipation Ta = 25℃ Ta = 70℃ Thermal Resistance.Junction- to-Ambient t ≤ 10s Thermal Resist. |
| Datasheet |
 AO3401 Data Sheet
PDF 1.32MB |
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AO3401 |
| Part Number | AO3401 |
| Manufacturer | HOTTECH |
| Title | P-Channel MOSFET |
| Description | FEATURES The AO3401 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. D G S Plastic-Encapsulate Mosfets AO3401 P-Channel MOSFET 1.Gate 2.Source 3.. |
| Features | The AO3401 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. D G S Plastic-Encapsulate Mosfets AO3401 P-Channel MOSFET 1.Gate 2.Source 3.Drain SOT-23 Absolute Maximum Ratings (TA=25oC, unless otherwise noted) Parameter Symbol Drain-Source Vo. |
AO3401 |
| Part Number | AO3401 |
| Manufacturer | Alpha & Omega Semiconductors |
| Title | 30V P-Channel MOSFET |
| Description | Product Summary The AO3401 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. VDS ID (at VGS=-10V) RDS(ON) (at VGS=-10V) RDS(ON) (at VGS =-4.5V) RDS. |
| Features | ax 90 125 80 Units V V A W °C Units °C/W °C/W °C/W Rev 6.1: February 2024 www.aosmd.com Page 1 of 5 AO3401 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=-250mA, VGS=0V -30 IDSS Zero Gate Voltage Drain Current VDS=-30V, VGS=0V TJ=55°C IGSS Gate-Body leakage curre. |
AO3401 |
| Part Number | AO3401 |
| Manufacturer | JinYu |
| Title | 30V P-Channel MOSFET |
| Description | 30V P-Channel Enhancement Mode MOSFET VDS= -30V RDS(ON), Vgs@-10V, [email protected] < 64m Ω RDS(ON), [email protected], [email protected] < 75m Ω RDS(ON), [email protected], [email protected] < 120mΩ Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Package Dimensions AO3401 D SOT-23-3L G. |
| Features | Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Package Dimensions AO3401 D SOT-23-3L GS REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.65 2.95 1.50 1.70 0.35 0.50 0 0.10 0.45 0.55 REF. G H K J L M Millimeter Min. 1.90 1.00 0.10 0.40 0.85 Max. REF. 1.30 0.20 1.15 0° 10° Maximum Ratings and Thermal Characteristics (TA = 25oC unless otherwise not. |
AO3401 |
| Part Number | AO3401 |
| Manufacturer | VBsemi |
| Title | P-Channel MOSFET |
| Description | AO3401-VB AO3401-VB Datasheet P-Channel 30 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Typ. 0.046 at VGS = - 10 V - 30 0.049 at VGS = - 6 V 0.054 at VGS = - 4.5 V ID (A)a - 5.6 -5 -4.5 Qg (Typ.) 11.4 nC (SOT-23) S TO-236 FEATURES • TrenchFET® Power MOSFET • 100 % Rg Tested APPLI. |
| Features |
• TrenchFET® Power MOSFET • 100 % Rg Tested APPLICATIONS • For Mobile Computing - Load Switch - Notebook Adaptor Switch - DC/DC Converter G1 S2 3D Top View G D P-Channel MOSFET www.VBsemi.com ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) VDS VGS TC = 25 °C TC = 70 °C. |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | AO3400 |
Alpha & Omega Semiconductors |
30V N-Channel MOSFET |
|
| 2 | AO3400 |
Kexin |
N-Channel MOSFET |
|
| 3 | AO3400 |
HOTTECH |
N-Channel MOSFET |
|
| 4 | AO3400 |
JinYu |
30V N-Channel MOSFET |
|
| 5 | AO3400A |
Alpha & Omega Semiconductors |
N-Channel MOSFET |
|
| 6 | AO3401A |
Alpha & Omega Semiconductors |
P-Channel MOSFET |
|
| 7 | AO3401L |
Alpha & Omega Semiconductors |
P-Channel MOSFET |
|
| 8 | AO3402 |
Alpha & Omega Semiconductors |
30V N-Channel MOSFET |
|
| 9 | AO3402 |
HOTTECH |
N-Channel MOSFET |
|
| 10 | AO3402 |
Kexin |
N-Channel MOSFET |
|
Desde 2024. D4U Semiconductor.
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