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AD100-8 Photodiode


AD100-8
Part Number AD100-8
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First Sensor
AD100-8
Part Number AD100-8
Manufacturer First Sensor
Title APD
Description AD100-8 SMD Order # 501810; 501811; 501812 Version 28-10-11 Features • APD with 0.008 mm² active area • 100 µm diameter active area • High gain at low bias voltage • Fast rise time, low capacitance • Optimum gain: 50-60 Description Circular active area APD chip with 100µm diameter. Ceramic carrier.
Features
• APD with 0.008 mm² active area
• 100 µm diameter active area
• High gain at low bias voltage
• Fast rise time, low capacitance
• Optimum gain: 50-60 Description Circular active area APD chip with 100µm diameter. Ceramic carrier type non hermetic SMD package with clear glass or filter window. Reflow solderable. Application
• Laser range finder
• High speed photometry
• High speed optical commun.
HY-LINE
AD100-8
Part Number AD100-8
Manufacturer HY-LINE
Title Photodiode
Description AD100-8 TO52S1 Avalanche Photodiode Special characteristics: high gain at low bias voltage fast rise time 100 µm diameter active area low capacitance Parameters: (at 20 ±2°C) Active Area Dark Current 1) (M=100) Total Capacitance 1) (M=100) Breakdown Voltage UBR (at ID=2µA) Temperature Coefficient o.
Features creasing bias voltage. Package (TO52S1): CASE ANODE 4 31 45° ∅ 2.54 ∅ 5.4 ± 0.2 ∅ 4.7 ± 0.1 ∅ 2.5 ± 0.1 ∅ 2.0 min. CATHODE 0.9 ± 0.3 0.5 max. 3.6 ± 0.2 2.7 ± 0.2 sensitive surface 13 ± 1.0 0.4 max. ∅ 0.45 Chip: AD100-8 diam. active area: 100 µm 1 3 4 view without window cap www.silicon-sensor.com Version: 04-10-26 Specification before: SSO-AD-100-8-TO52-S1 www.pacific-sensor.com .

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