| Part Number | A1SHB |
| Manufacturer | Bruckewell |
| Title | P-Channel Enhancement Mode Power MOSFET |
| Description | The MS23P01S uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This d... |
| Features |
● VDS = -20V,ID = -2.6A RDS(ON) < 160mΩ @ VGS=-2.5V RDS(ON) < 120mΩ @ VGS=-4.5V D G S Schematic diagram ● High power and current handing capability ● Lead free product is acquired ● Surface mount package Marking and pin assignment Application ● PWM applications ● Load switch SC70-3/ SOT-323 top... |
| Datasheet | A1SHB pdf datasheet - 385.32KB |
| Part Number | A1SHB |
| Manufacturer | H&M Semiconductor |
| Title | P-Channel Trench Power MOSFET |
| Description | The HM2301B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This de. |
| Features |
● VDS = -20V,ID = -2.5A RDS(ON) < 160mΩ @ VGS=-2.5V RDS(ON) < 120mΩ @ VGS=-4.5V ● High power and current handing capability ● Lead free product is acquired ● Surface mount package D G S Schematic diagram A1SHB Marking and pin assignment Application ● PWM applications ● Load switch SOT-23 top view. |
| Datasheet | A1SHB pdf datasheet |
| Part Number | A1SHB |
| Manufacturer | Kexin |
| Title | P-Channel MOSFET |
| Description | SMD Type P-Channel Enhancement MOSFET SI2301 (KI2301) MOSFET ■ Features ● VDS (V) =-20V ● RDS(ON) ＜ 100mΩ (VGS =-4.5V) ● RDS(ON) ＜ 150mΩ (VGS =. |
| Features |
● VDS (V) =-20V ● RDS(ON) ＜ 100mΩ (VGS =-4.5V) ● RDS(ON) ＜ 150mΩ (VGS =-2.5V) G1 S2 3D +0.22.8 -0.1 SOT-23-3 2.9 +0.2 -0.1 0.4 +0.1 -0.1 3 12 0.95 +0.1 -0.1 1.9 +0.1 -0.2 +0.21.1 -0.1 +0.21.6 -0.1 0.55 0.4 Unit: mm 0.15 +0.02 -0.02 1. Gate 2. Source 3. Drain 0-0.1 +0.10.68 -0.1 ■ Absolute Ma. |
| Datasheet | A1SHB pdf datasheet |
| Part Number | A1SHB |
| Manufacturer | YANGJING |
| Title | P-Channel MOSFET |
| Description | SHENZHEN YANGJING MICROELECTRONICS CO.,LTD SOT-23 Plastic-Encapsulate MOSFETS SI2301 P-Channel 20-V(D-S) MOSFET FEATURE TrenchFET Power MOSFET AP. |
| Features |
TrenchFET Power MOSFET
APPLICATIONS z Load Switch for Portable Devices z DC/DC Converter
MARKING: A11
SHB
SOT-23
1. GATE 2. SOURCE 3. DRAIN
Maximum ratings (Ta=25℃ unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage Gate-Source Voltage
Continuous Drain Current Pulsed Drain Current C. |
| Datasheet | A1SHB pdf datasheet |
| Part Number | A1SHB |
| Manufacturer | Vanguard Semiconductor |
| Title | P-Channel Advanced Power MOSFET |
| Description | VS2301BC-A -20V/-3A P-Channel Advanced Power MOSFET Features P-Channel Enhancement mode Fast Switching Pb-free lead plating; RoHS complia. |
| Features |
P-Channel Enhancement mode Fast Switching Pb-free lead plating; RoHS compliant; Halogen free
V DS R DS(on),TYP @VGS=-4.5V R DS(on),TYP @VGS=-3.3V R DS(on),TYP @VGS=-2.5V ID
-20
V
86
mΩ
94
mΩ
106
mΩ
-3
A
SOT23
Part ID V2301BC-A
Package Type SOT23
Marking A1SHB
Tape and reel in. |
| Datasheet | A1SHB pdf datasheet |
Since 2024. D4U Semiconductor.
|
Contact Us
|
Privacy Policy