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| Part Number | 8810 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | 8810 |
| Manufacturer | H&M semi |
| Title | Dual N-Channel Enhancement Mode Power MOSFET |
| Description | The HM8810E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested. General Features ● VDS = 20V,ID =7A RDS(ON) < 27mΩ @ VGS=2.5V RDS(. |
| Features |
● VDS = 20V,ID =7A RDS(ON) < 27mΩ @ VGS=2.5V RDS(ON) < 21mΩ @ VGS=4.5V ESD Rating: 2000V HBM ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package Schematic diagram 8810 Marking and pin Assignment Marking and pin Assignment Application ●PWM application ●Load switch T6623 SOT23-6L top view Package Marking And Ordering Information Device. |
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