Busque con el número de pieza junto con el fabricante o la descripción
| Distributor | Stock | Price | Buy |
|---|
8205A |
| Part Number | 8205A |
| Manufacturer | HOTTECH |
| Title | Dual N-Channel MOSFET |
| Description | The 8205A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features ● VDS = 19.5V,ID = 6A RDS(ON) < 37mΩ @ VGS=2.5V RDS(ON. |
| Features |
● VDS = 19.5V,ID = 6A RDS(ON) < 37mΩ @ VGS=2.5V RDS(ON) < 27mΩ @ VGS=4.5V ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package Application ●Battery protection ●Load switch ●Power management pin Assignment 8205A TSSOP-8 top view D1 D2 G1 G2 S1 S2 Schematic diagram Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol D. |
8205A |
| Part Number | 8205A |
| Manufacturer | ETC |
| Title | N-channel power MOSFET |
| Description | N MOSFET 8205A/8205B/8205C 1. N8205A/8205B/ 8205C 、。 8205A/8205B/8205C 。 2. z z z 2.5V z VBDSB=20V z IDB =B 6A @ VGB S=B 4.5V z 8205A ： RDS(ON) B <32m B Ω @ VGB S=B 4.5V z 8205B ： RBDS(ON) |
| Features | A 20 - 22 - - 0.03 0.5 0.70 40 1 ±100 V uA nA - V/°C 1.2 V 2 8205A/8205B/8205C （1） RBDS(ON)B （1） （1） （1） gfsB B QgB B QgsB B QgdB B TBd(on)B TrB B TBd(off)B TfB B CissB B CossB B CrssB B VSDB B ISB B VGSB B = 4.5V 8205A IDB = B 4.5A VGSB B = 2.5V IDB = B 3.5A VGSB B = 4.5V 8205B IDB = B 4.5A VGSB B = 2.5V IDB = B 3.5A VGSB B = . |
8205A |
| Part Number | 8205A |
| Manufacturer | HSMC |
| Title | Dual N-Channel MOSFET |
| Description | This N-Channel 2.5V specified MOSFET is a rugged gate version of advanced trench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V-10V) 8 7 6 5 Q2 Q1 1 2 3 4 Pin 1: Drain Pin 2 / 3: Source 1 Pin 4: Gate 1 Pin 5: Gate 2 Pin 6 / 7:. |
| Features |
• RDS(on)=38mΩ@VGS=2.5V, ID=5.2A; RDS(on)=25mΩ@VGS=4.5V, ID=6A • High Density Cell Design for Ultra Low On-Resistance • High Power and Current Handing Capability • Fully Characterized Avalanche Voltage and Current • Ideal for Li ion Battery Pack Applications Applications • Battery Protection • Load Switch • Power Management Absolute Maximum Ratings (TA=25oC, unless otherwise noted) Symbol VDS VG. |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 8205 |
Allegro MicroSystems |
LOW-DROPOUT REGULATORS |
|
| 2 | 8205 |
AiT Semiconductor |
N-CHANNEL POWER MOSFET |
|
| 3 | 8205 |
Fortune Semiconductor |
Dual N-Channel Power MOSFET |
|
| 4 | 8205B |
ETC |
N-channel power MOSFET |
|
| 5 | 8205C |
ETC |
N-channel power MOSFET |
|
| 6 | 82012 |
Powerex Power Semiconductors |
Phase Control SCR |
|
| 7 | 8203 |
Intel Corporation |
64K DYNAMIC RAM CONTROLLER |
|
| 8 | 82077AA |
Intel Corporation |
CHMOS SINGLE-CHIP FLOPPY DISK CONTROLLER |
|
| 9 | 82078 |
Intel Corporation |
FLOPPY DISK CONTROLLER |
|
| 10 | 82078-1 |
Intel Corporation |
FLOPPY DISK CONTROLLER |
|
Desde 2024. D4U Semiconductor.
|