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7N150-E3 |
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| Part Number | 7N150-E3 |
| Manufacturer | UTC |
| Description | The UTC 7N150-E3 provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. 1 FEATURES0 * RDS(ON) ≤ 3.8 Ω @ VGS=10V, ID=3.5A * Low Reverse Transfer Capacitance * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, High Ruggedn. |
| Features |
* RDS(ON) ≤ 3.8 Ω @ VGS=10V, ID=3.5A * Low Reverse Transfer Capacitance * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, High Ruggedness SYMBOL Power MOSFET TO-220F1 ORDERING INFORMATION Ordering Number Lead Free Halogen Free 7N150L-TF1-T 7N150G-TF1-T Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-220F1 Pin Assignment 1 2 3 G D S Packing Tube MARKING www.unisonic.com.tw Copyright © 2024 Unisonic Technologies Co., Ltd 1 of 5 QW-R502-D272.a 7N150-E3 Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC=25°С, unles. |
| Datasheet |
 7N150-E3 Data Sheet
PDF 274.10KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 7N10 |
Unisonic Technologies |
N-Channel Power MOSFET |
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| 2 | 7N100-C |
UTC |
N-CHANNEL MOSFET |
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| 3 | 7N10Z |
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N-CHANNEL POWER MOSFET |
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| 4 | 7N120-E2 |
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| 5 | 7N180M |
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| 6 | 7N20 |
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| 7 | 7N20 |
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| 8 | 7N20Z |
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| 9 | 7N270K |
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| 10 | 7N270K |
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Desde 2024. D4U Semiconductor.
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