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3SK22 Silicon N-Channel Transistor Datasheet


3SK22

Toshiba
3SK22
Part Number 3SK22
Manufacturer Toshiba (https://www.toshiba.com/)
Title N-CHANNEL POWER MOSFET
Description SILICON N CHANNEL JUNCTION TYPE 3SK22 FM TUNER APPLICATIONS. VHF BAND AMPLIFIER APPLICATIONS. FEATURES • High Power Gain : Gps =20dB (Typ. ) (f=...
Features
• High Power Gain : Gps =20dB (Typ. ) (f=100MHz)
• Low Noise Figure : NF=2dB (Typ. ) (f=100MHz)
• High Forward Transfer Admittance : |y fs | = 7ms (Typ.) (f=lkHz)
• High Input Impedance : Riss = 12kfi (Typ.) (f=100MHz)
• Low Reverse Transfer Capacitance : Crss =0 - 6 P F (Max.) Unit in 05.8UAX. MA...

Document Datasheet 3SK22 datasheet pdf (54.31KB)
Distributor Distributor
DigiKey
All other distributors
Stock 195000 In Stock
Price
634 units: 651.8896 KRW
BuyNow BuyNow Buy Now (Manufacturer a Rochester Electronics LLC 3SK222-T2-A)



3SK299

NEC
3SK299
Part Number 3SK299
Manufacturer NEC
Title RF AMP. FOR UHF TV TUNER N-CHANNEL GaAs DUAL-GATE MES FIFLD-EFFECT TRANSISTOR 4 PIN SMALL MINI MOLD
Description DATA SHEET MES FIELD EFFECT TRANSISTOR 3SK299 RF AMP. FOR UHF TV TUNER N-CHANNEL GaAs DUAL-GATE MES FIFLD-EFFECT TRANSISTOR 4 PIN SMALL MINI MOL.
Features
• Suitable for use as RF amplifier in UHF TV tuner.
• Low Crss : 0.02 pF TYP.
• High GPS : 20 dB TYP.
• Low NF : 1.1 dB TYP.
• 4 PIN SMALL MINI MOLD PACKAGE PACKAGE DIMENSIONS in millimeters 0.3 +0.1
  –0.05 0.3 +0.1
  –0.05 3 4 0.3 +0.1
  –0.05 0.15 +0.1
  –0.05 (1.3) 1 0.9±0.1 0.3 0.4 +0.1
  –0.05 VDS = 13.

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3SK298

Hitachi Semiconductor
3SK298
Part Number 3SK298
Manufacturer Hitachi Semiconductor
Title Silicon N-Channel Dual Gate MOS FET
Description 3SK298 Silicon N-Channel Dual Gate MOS FET ADE-208-390 1st. Edition Application UHF / VHF RF amplifier Features • Low noise figure. NF = 1.0 dB.
Features
• Low noise figure. NF = 1.0 dB typ. at f = 200 MHz
• Capable of low voltage operation Outline CMPAK
  –4 2 3 4 1 1. Source 2. Gate1 3. Gate2 4. Drain 3SK298 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate 1 to source voltage Gate 2 to source voltage Drain current Channel powe.

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3SK297

Hitachi Semiconductor
3SK297
Part Number 3SK297
Manufacturer Hitachi Semiconductor
Title Silicon N-Channel Dual Gate MOS FET
Description 3SK297 Silicon N-Channel Dual Gate MOS FET ADE-208-389 1st. Edition Application UHF / VHF RF amplifier Features • Low noise figure. NF = 1.0 dB.
Features
• Low noise figure. NF = 1.0 dB typ. at f = 200 MHz
• Capable of low voltage operation Outline MPAK-4 2 3 1 4 1. Source 2. Gate1 3. Gate2 4. Drain 3SK297 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate 1 to source voltage Gate 2 to source voltage Drain current Channel pow.

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3SK296

Renesas
3SK296
Part Number 3SK296
Manufacturer Renesas
Title N-Channel Dual-Gate MOSFET
Description .
Features .

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3SK296

Hitachi Semiconductor
3SK296
Part Number 3SK296
Manufacturer Hitachi Semiconductor
Title Silicon N-Channel Dual-Gate MOSFET
Description 3SK296 Silicon N-Channel Dual Gate MOS FET ADE-208-388 1st. Edition Application UHF RF amplifier Features • Low noise figure. NF = 2.0 dB Typ. .
Features
• Low noise figure. NF = 2.0 dB Typ. at f = 900 MHz
• Capable of low voltage operation Outline CMPAK
  –4 2 3 4 1 1. Source 2. Gate1 3. Gate2 4. Drain 3SK296 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate 1 to source voltage Gate 2 to source voltage Drain current Channel powe.

Document 3SK296 datasheet pdf



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