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| Part Number | 3DD2102 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | 3DD2102 |
| Manufacturer | Jilin Sino |
| Title | CASE-RATED BIPOLAR TRANSISTOR |
| Description | of Changes °æ±¾£º 200911E 6/6 . |
| Features |
z 3DD2102 is high breakdown µÈЧç · EQUIVALENT CIRCUIT voltage of NPN bipolar transistor. The main process of manufacture: high voltage mesa type process, triple diffused process etc., adoption of fully plastic packge. RoHS product. ,²É » ·±£ RBE=50¦¸ (Typ.) ¶©»õÐÅÏ¢ ¶© »õ ÐÍ ORDER MESSAGE ºÅ Ó¡ ¼Ç ÎÞ±ËØ Halogen Free ·ñ NO ·â ×° °ü ×° Packaging ÅÝÄFoam Æ÷¼þÖØÁ¿ Device Weight 5.50 g(typ) Ord. |
| Part Number | 3DD2102 |
| Manufacturer | ETC |
| Title | Low-frequency amplification shell rated bipolar transistors |
| Description | DataSheet.in R ：200705B 3DD2102 ： 2007.5.29 DataSheet.in R '' Ԣᬒㅵᅮⱘঠᵕൟԧㅵ D ѻક⡍ᗻ ƹय़:Vcbo=1500V ƹय़Ԣ:Vce(sat)=5V(max.) ƹᓔ݇ᑺ:tf=16 PD[ ƹৃᗻ ƹ TO-3P(H)IS 1. ᵕ 2. ⬉ᵕ 3. থᇘᵕ 1 2 3 ⦃ֱ˄RoHS˅ѻક Џ⫼ ƹᔽ⬉ᴎߎ⬉ ὖ '' ᰃ 131 ঠᵕൟডय़ࡳ⥛ԧㅵˈࠊ Ё⫼ⱘЏᎹᡔᴃ᳝˖य़ৄᎹᡔᴃǃϝ ᠽᬷᡔᴃㄝ⫼ลܼ᭭ࣙᇕᵘDŽ RBE=. |
| Features |
9 9 P$ P$ 9 9 9 6 6 0+]
⬉ᵕüᵕডⓣ⬉⌕ ,&%2 থᇘᵕüᵕডⓣ⬉⌕ ,(%2 Ⳉ⌕⬉⌕Ⲟ K)( K)( 9%( VDW 9) WI WV I7
⬉ᵕüথᇘᵕय़ 9&( VDW ᵕüথᇘᵕय़ ሐѠᵕㅵℷय़ ϟᯊ ᄬᯊ ⡍ᕕ⥛
⠜ᴀ:200705B
2/6
DataSheet.in
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⡍ᕕ᳆
IC –VCE HFE – IC ݅ থ ᇘ ᵕ TC=25 ⬉ᵕ⬉⌕ IC˄A˅ Ⳉ⌕⬉⌕Ⲟ HFE ݅থᇘᵕ VCE=5V ⬉ᵕ-থᇘᵕ⬉य़ VCE˄V˅ ⬉ᵕ⬉⌕ IC˄A˅ ݅থᇘᵕ TC=25ć ⬉ᵕ-থᇘᵕय़ VCE(sat)˄V˅ . |
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Desde 2024. D4U Semiconductor.
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