Busque con el número de pieza junto con el fabricante o la descripción
| Distributor | Stock | Price | Buy |
|---|
30H10K |
| Part Number | 30H10K |
| Manufacturer | TGD |
| Title | N-Channel Enhancement Mode Power MOSFET |
| Description | The TGD30H10K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. TGD30H10K General Features ● VDS =30V,ID =100A RDS(ON) <5.5mΩ @ VGS=10V (Typ:4mΩ) ● High density cell design for ultra low Rdson ● Fully c. |
| Features |
● VDS =30V,ID =100A RDS(ON) <5.5mΩ @ VGS=10V (Typ:4mΩ) ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation ● Special process technology for high ESD capability Schematic diagram Application ● Power switching application ● Hard switched and high frequency ci. |
30H10K |
| Part Number | 30H10K |
| Manufacturer | ROUM |
| Title | 100A 30V N-channel Enhancement Mode Power MOSFET |
| Description | These N-channel Enhanced VDMOSFETs Used advanced trench technology design, provided excellent RDSON and low gate charge. Which accords with the RoHS standard. 2 Features ● Fast Switching ● Low ON Resistance(Rdson≤5.5mΩ) ● Low Gate Charge(Typical:43nC) ● Low Reverse Transfer Capacitance(Typical:215pF. |
| Features |
● Fast Switching ● Low ON Resistance(Rdson≤5.5mΩ) ● Low Gate Charge(Typical:43nC) ● Low Reverse Transfer Capacitance(Typical:215pF) ● 100% Single Pulse Avalanche Energy Test ● 100% ΔVDS Test 3 Applications ● Power switching applications ● Inverter management system ● Electric Tools ● Automotive Electronics VDSS = 30V RDS(on) （TYP)= 4mΩ ID = 100A TO-252B TO-251B 4 Electrical Characteristics 4.1. |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 30H10I |
ROUM |
100A 30V N-channel Enhancement Mode Power MOSFET |
|
| 2 | 30H150 |
FNK |
N-Channel MOSFET |
|
| 3 | 30H80 |
FNK |
N-Channel Enhancement Mode MOSFET |
|
| 4 | 30H80A |
FNK |
N-Channel Enhancement Mode MOSFET |
|
| 5 | 30HC |
Semtech |
Silicon Epitaxial Planar Zener Diodes |
|
| 6 | 30HCA |
Semtech |
Silicon Epitaxial Planar Zener Diodes |
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| 7 | 30HCB |
Semtech |
Silicon Epitaxial Planar Zener Diodes |
|
| 8 | 30HCC |
Semtech |
Silicon Epitaxial Planar Zener Diodes |
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| 9 | 30HCD |
Semtech |
Silicon Epitaxial Planar Zener Diodes |
|
| 10 | 30HS |
SEMTECH |
Silicon Epitaxial Planar Zener Diodes |
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Desde 2024. D4U Semiconductor.
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