| Description | www.DataSheet.co.kr 2SA1972 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1972 High-Voltage Switching Applications Unit: mm • High breakdown voltage: VCEO = −400 V Absolute Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage ... |
| Features | he Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2009-12-21 Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr 2SA1972 Electrical Characteristics (Ta = 25°C) Characteristics Collector cut-off current Emitter cut-off current Collector-... |
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| No. | Part # | Manufacture | Description | Datasheet |
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Toshiba Semiconductor |
Silicon PNP Transistor |
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Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors |
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NEC |
PNP EPITAXIAL SILICON TRANSISTOR |
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NEC |
PNP EPITAXIAL SILICON TRANSISTOR |
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AUK corp |
PNP Silicon Transistor |
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AUK corp |
PNP Silicon Transistor |
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AUK corp |
PNP Silicon Transistor |
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LZG |
SILICON PNP TRANSISTOR |
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BLUE ROCKET ELECTRONICS |
Silicon PNP transistor |
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AUK corp |
PNP Silicon Transistor |
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