2SA1971 |
Part Number | 2SA1971 |
Manufacturer | Toshiba (https://www.toshiba.com/) Semiconductor |
Description | TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1971 High-Voltage Switching Applications 2SA1971 Unit: mm • High breakdown voltage: VCEO = −400 V Absolute Maximum Ratings (Ta = 25°C) Charac... |
Features |
re within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Start of commercial production
1995-07
1
2013-11-01
2SA1971
Electrical Characteristics (Ta = 25°C)
Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition fre... |
Document |
2SA1971 Data Sheet
PDF 161.09KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | 2SA1972 |
Toshiba Semiconductor |
TRANSISTOR | |
2 | 2SA1973 |
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PNP/NPN Epitaxial Planar Silicon Transistors | |
3 | 2SA1977 |
NEC |
PNP EPITAXIAL SILICON TRANSISTOR | |
4 | 2SA1978 |
NEC |
PNP EPITAXIAL SILICON TRANSISTOR | |
5 | 2SA1979 |
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6 | 2SA1979M |
AUK corp |
PNP Silicon Transistor | |
7 | 2SA1979S |
AUK corp |
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8 | 2SA1979S |
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SILICON PNP TRANSISTOR | |
9 | 2SA1979S |
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10 | 2SA1979SF |
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