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2SK871

NEC
2SK871
Part Number 2SK871
Manufacturer NEC
Title N-Channel MOSFET
Description ...
Features ...

Datasheet 2SK871 pdf datasheet - 1.61MB



2SK879

Toshiba Semiconductor
2SK879
Part Number 2SK879
Manufacturer Toshiba Semiconductor
Title Silicon N-Channel MOSFET
Description TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK879 General Purpose and Impedance Converter and Condenser Microphone Applicatio.
Features S = 0 VGS (OFF) VDS = 10 V, ID = 0.1 mA ïYfsï VDS = 10 V, VGS = 0, f = 1 kHz Ciss VDS = 10 V, VGS = 0, f = 1 MHz Crss VGD = -10 V, ID = 0, f = 1 MHz NF VDS = 15 V, VGS = 0 RG = 100 kW, f = 120 Hz ¾ ¾ -1.0 nA -50 ¾ ¾ V 0.3 ¾ 6.5 mA -0.4 ¾ -5.0 V 1.2 ¾ ¾ mS ¾ 8.2 ¾ pF ¾ 2.6 ¾ pF ¾ 0.5.

Datasheet 2SK879 pdf datasheet




2SK875

NEC
2SK875
Part Number 2SK875
Manufacturer NEC
Title N-Channel MOSFET
Description Free Datasheet http://www.datasheet4u.com/ Free Datasheet http://www.datasheet4u.com/ Free Datasheet http://www.datasheet4u.com/ Free Datasheet.
Features .

Datasheet 2SK875 pdf datasheet




2SK873

NEC
2SK873
Part Number 2SK873
Manufacturer NEC
Title N-Channel MOSFET
Description .
Features .

Datasheet 2SK873 pdf datasheet




2SK870

Inchange Semiconductor
2SK870
Part Number 2SK870
Manufacturer Inchange Semiconductor
Title N-Channel MOSFET Transistor
Description ·Drain Current –ID=20A@ TC=25℃ ·Drain Source Voltage- : VDSS=500V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device perf.
Features =25℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID= 10mA VGS(TH) Gate Threshold Voltage VDS=25V; ID= 1mA RDS(ON) Drain-Source On-stage Resistance VGS= 10V; ID=10A IGSS Gate Source Leakage Current VGS= ±20V; VDS= 0 IDSS Zero Gate Voltage Drain Current VDS.

Datasheet 2SK870 pdf datasheet





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