Part Number | 2SK871 |
Manufacturer | NEC |
Title | N-Channel MOSFET |
Description | ... |
Features |
... |
Datasheet | 2SK871 pdf datasheet - 1.61MB |
Part Number | 2SK879 |
Manufacturer | Toshiba Semiconductor |
Title | Silicon N-Channel MOSFET |
Description | TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK879 General Purpose and Impedance Converter and Condenser Microphone Applicatio. |
Features |
S = 0
VGS (OFF) VDS = 10 V, ID = 0.1 mA
ïYfsï
VDS = 10 V, VGS = 0, f = 1 kHz
Ciss VDS = 10 V, VGS = 0, f = 1 MHz Crss VGD = -10 V, ID = 0, f = 1 MHz
NF VDS = 15 V, VGS = 0 RG = 100 kW, f = 120 Hz
¾ ¾ -1.0 nA
-50 ¾
¾
V
0.3 ¾ 6.5 mA
-0.4
¾ -5.0
V
1.2 ¾ ¾ mS
¾ 8.2 ¾ pF
¾ 2.6 ¾ pF
¾ 0.5. |
Datasheet | 2SK879 pdf datasheet |
Part Number | 2SK875 |
Manufacturer | NEC |
Title | N-Channel MOSFET |
Description | Free Datasheet http://www.datasheet4u.com/ Free Datasheet http://www.datasheet4u.com/ Free Datasheet http://www.datasheet4u.com/ Free Datasheet. |
Features |
. |
Datasheet | 2SK875 pdf datasheet |
Part Number | 2SK873 |
Manufacturer | NEC |
Title | N-Channel MOSFET |
Description | . |
Features |
. |
Datasheet | 2SK873 pdf datasheet |
Part Number | 2SK870 |
Manufacturer | Inchange Semiconductor |
Title | N-Channel MOSFET Transistor |
Description | ·Drain Current –ID=20A@ TC=25℃ ·Drain Source Voltage- : VDSS=500V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device perf. |
Features |
=25℃)
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID= 10mA
VGS(TH) Gate Threshold Voltage
VDS=25V; ID= 1mA
RDS(ON) Drain-Source On-stage Resistance VGS= 10V; ID=10A
IGSS
Gate Source Leakage Current
VGS= ±20V; VDS= 0
IDSS
Zero Gate Voltage Drain Current
VDS. |
Datasheet | 2SK870 pdf datasheet |
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