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| Part Number | 2SK762 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | 2SK762 |
| Manufacturer | Inchange Semiconductor |
| Title | N-Channel MOSFET Transistor |
| Description | ·Drain Current –ID=3A@ TC=25℃ ·Drain Source Voltage- : VDSS= 400V(Min) ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage, high speed power switching applications such as switching . |
| Features | AL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID= 10mA VGS(th) Gate Threshold Voltage VDS=25 V; ID=1mA RDS(on) Drain-Source On-stage Resistance VGS=10V; ID= 2A IGSS Gate Source Leakage Current VGS= ±20V;VDS= 0 IDSS Zero Gate Voltage Drain Current VDS=320V; VGS= 0 2SK762 MIN TYP MAX UNIT 400 V 1.0 5.0 V 3.0 Ω ±1 uA 10. |
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Desde 2024. D4U Semiconductor.
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