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2SK72 |
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| Part Number | 2SK72 |
| Manufacturer | Toshiba (https://www.toshiba.com/) |
| Description | 2SK72 yV s . SILICON N CHANNEL JUNCTION DUAL TYPE (COMPLETELY SEPARATED TYPE) DIFFERENTIAL AMPLIFIER APPLICATIONS. FEATURES: • Ultra Low Noise: NF=0.5dB (Typ.) at Rg=100kft, f=120Hz vN(p-p) =1 - 7 ^ v ( T yP-) at Rg =10kft, Jf=5^50Hz • High Gain : j f | =1. 5^6. 5mS • Low Offset : | GS1 -VGS2 | =10mV (Max.) • Good Tracking: A Vgs1-Vgs2| /JTa=30yV/°C (Typ. |
| Features |
• Ultra Low Noise: NF=0.5dB (Typ.) at Rg=100kft, f=120Hz vN(p-p) =1 - 7 ^ v ( T yP-) at Rg =10kft, Jf=5^50Hz • High Gain : j f | =1. 5^6. 5mS • Low Offset : | GS1 -VGS2 | =10mV (Max.) • Good Tracking: A Vgs1-Vgs2| /JTa=30yV/°C (Typ.) | • High Input Resistance: I G=-100pA (Max.) at VDS=10V, I D=400yA • Similar characteristics as 2SK48 j2fe.40MAX Unit in mm ^gfr-^i 0.86MAX. . 1. SOURCE CU Z. DRAIN (1) 3. GATE (1) 4. SOURCE (2) 5. DRAIN (2} 6. GATE (2) 7. CASE MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Gate-Drain Voltage Gate 1 - Gate 2 Voltage Gate Current Drain Power Dissipation (One. |
| Datasheet |
 2SK72 Data Sheet
PDF 55.03KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SK700 |
NEC |
N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR |
|
| 2 | 2SK701 |
ETC |
N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR |
|
| 3 | 2SK702 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 4 | 2SK702 |
NEC |
N-Channel MOSFET |
|
| 5 | 2SK703 |
NEC |
N-Channel MOSFET |
|
| 6 | 2SK703 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 7 | 2SK704 |
NEC |
N - CHANNEL MOS FIELD EFFECT POWER TRANSISTOR |
|
| 8 | 2SK705 |
ETC |
N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR |
|
| 9 | 2SK707 |
NEC |
N-Channel MOS Field Effect Power Transistor |
|
| 10 | 2SK709 |
Toshiba Semiconductor |
N-Channel MOSFET |
|
Desde 2024. D4U Semiconductor.
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