Part Number | 2SK529 |
Distributor | Stock | Price | Buy |
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Part Number | 2SK529 |
Manufacturer | INCHANGE |
Title | N-Channel MOSFET Transistor |
Description | ·Drain Current –ID=2A@ TC=25℃ ·Drain Source Voltage- : VDSS=450V(Min) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed especially for high voltage,high speed applications, such as off-line switching power supplies , UPS. |
Features | mA RDS(ON) Drain-Source On-stage Resistance VGS= 10V; ID=1A VDS(ON) Drain-Source Saturation Voltage IF= 1A; VGS=10V IGSS Gate Source Leakage Current VGS= ±20V; VDS= 0 IDSS Zero Gate Voltage Drain Current VDS=450V; VGS= 0 2SK529 MIN TYP. MAX UNIT 450 V 1.5 3.5 V 2.6 Ω 10 13 V ±1 uA 1 mA NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at . |
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