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2SK48 |
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| Part Number | 2SK48 |
| Manufacturer | Toshiba (https://www.toshiba.com/) |
| Description | : 2SK48 SILICON N CHANNEL JUNCTION TYPE (INDUSTRIAL APPLICATIONS) MEDICAL ELECTRONIC EQUIPMENT APPLICATIONS. FEATURES • Ultra Low Noise : NF=0.5dB (Typ.) at Rg =100kft, f=120Hz : VNp- p =1.7yV (Typ.) at R =10kft, f=5^50Hz g • High Gain: |Yf s | =1.0^5.0mS • High Input Impedance : lGSS=-0.1nA (Max.) at VGS =-10V. Unit in mm gfe.gMAX. 01.2MAX . MAXIMUM RAT. |
| Features |
• Ultra Low Noise : NF=0.5dB (Typ.) at Rg =100kft, f=120Hz : VNp- p =1.7yV (Typ.) at R =10kft, f=5^50Hz g • High Gain: |Yf s | =1.0^5.0mS • High Input Impedance : lGSS=-0.1nA (Max.) at VGS =-10V. Unit in mm gfe.gMAX. 01.2MAX . MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Gate-Drain Voltage Gate Current Drain Power Dissipation Junction Temperature Storage Temperature Range SYMBOL VgDS Ig Pd ^St£_ RATING UNIT -20 V 10 mA 100 mW 150 °C -65^150 J, SOURCE a GATE a DRAIN 4, SHIELD (CASE) TO 17 4, TB — 6C TOSHIBA 4A 1A Weight : 0.30g ELECTRICAL CHARACTERISTICS (Ta=25°C) CHARACTERISTIC. |
| Datasheet |
 2SK48 Data Sheet
PDF 151.48KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SK400 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 2 | 2SK4002 |
Toshiba Semiconductor |
N-Channel MOSFET |
|
| 3 | 2SK4003 |
Toshiba Semiconductor |
N-Channel MOSFET |
|
| 4 | 2SK4004-01MR |
Fuji |
Power MOSFET |
|
| 5 | 2SK4005-01MR |
Fuji Electric |
Power MOSFET |
|
| 6 | 2SK4012 |
Toshiba Semiconductor |
N-Channel MOSFET |
|
| 7 | 2SK4013 |
Toshiba Semiconductor |
N-Channel MOSFET |
|
| 8 | 2SK4013 |
INCHANGE |
N-Channel MOSFET |
|
| 9 | 2SK4014 |
Toshiba Semiconductor |
N-Channel MOSFET |
|
| 10 | 2SK4014 |
INCHANGE |
N-Channel MOSFET |
|
Desde 2024. D4U Semiconductor.
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