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| Part Number | 2SK3628 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | 2SK3628 |
| Manufacturer | TY Semiconductor |
| Title | Transistor |
| Description | SMD Type Transistors IC Product specification 2SK3628 TO-263 + 0 .1 1 .2 7 -0 .1 Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 Features High-speed switching Low ON resistance Ron + 0 .2 8 .7 -0 .2 No secondary breakdown Avalanche energy capability guaranteed +0.1 1.27-0.1 0.1max +0.1 0.81-0.1 + 0 .. |
| Features | High-speed switching Low ON resistance Ron + 0 .2 8 .7 -0 .2 No secondary breakdown Avalanche energy capability guaranteed +0.1 1.27-0.1 0.1max +0.1 0.81-0.1 + 0 .2 5 .2 8 -0 .2 2.54 +0.2 -0.2 +0.1 5.08-0.1 + 0 .2 2 .5 4 -0 .2 + 0 .2 1 5 .2 5 -0 .2 2.54 +0.2 0.4-0.2 Absolute Maximum Ratings Ta = 25 Parameter Drain-source surrender voltage Gate-source surrender voltage Drain current Peak. |
| Part Number | 2SK3628 |
| Manufacturer | Panasonic |
| Title | Silicon N-channel power MOSFET |
| Description | Power MOSFETs 2SK3628 Silicon N-channel power MOSFET For hihg-speed switching 15.0±0.3 11.0±0.2 Unit: mm 5.0±0.2 (3.2) (0.7) ■ Features • Avalanche energy capability guaranteed • High-speed switching • Low ON resistance Ron • No secondary breakdown ■ Absolute Maximum Ratings TC = 25°C Parame. |
| Features |
• Avalanche energy capability guaranteed • High-speed switching • Low ON resistance Ron • No secondary breakdown ■ Absolute Maximum Ratings TC = 25°C Parameter Symbol Rating Unit Drain-source surrender voltage Gate-source surrender voltage Drain current Peak drain current Avalanche energy capability * VDSS VGSS ID IDP EAS 230 ±30 20 80 570 V V A A mJ Power dissipation Ta = 25°C Channel. |
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