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| Part Number | 2SK357 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | 2SK357 |
| Manufacturer | Inchange Semiconductor |
| Title | N-Channel MOSFET Transistor |
| Description | ·Drain Current –ID= 5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 150V(Min) ·Fast Switching Speed APPLICATIONS ·High speed power switching applications. ·High Drain Current. ·High forward transfer admittance ·Low leakage Current. ·Low Drain-Source on resistance ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL . |
| Features | Gate Threshold Voltage VDS= 10VGS; ID=1mA RDS(on) Drain-Source On-stage Resistance VGS=10V; ID= 3A IGSS Gate Source Leakage Current VGS= ±20V;VDS= 0 IDSS Zero Gate Voltage Drain Current VDS= 150V; VGS= 0 tr Rise time ton Turn-on time tf Fall time VGS=10V;ID=3A;RL=25Ω toff Turn-off time MIN TYP MAX UNIT 150 V 1.5 3.5 V 0.6 0.9 Ω ±100 nA 1 mA 30 60 ns 40 80 ns 20 50 ns 60 120 ns. |
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Desde 2024. D4U Semiconductor.
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