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| Distributor | Stock | Price | Buy |
|---|
2SK2955 |
| Part Number | 2SK2955 |
| Manufacturer | Hitachi Semiconductor |
| Title | Silicon N Channel MOS FET |
| Description | 2SK2955 Silicon N Channel MOS FET High Speed Power Switching ADE-208-564B (Z) 3rd. Edition Jun 1998 Features • Low on-resistance R DS =0.010 Ω typ. • High speed switching • 4V gate drive device can be driven from 5V source Outline TO–3P D G 1 S 2 3 1. Gate 2. Drain (Flange) 3. Source 2SK29. |
| Features |
• Low on-resistance R DS =0.010 Ω typ. • High speed switching • 4V gate drive device can be driven from 5V source Outline TO –3P D G 1 S 2 3 1. Gate 2. Drain (Flange) 3. Source 2SK2955 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dis. |
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|---|---|---|---|---|
| 1 | 2SK2951 |
Sanyo Semicon Device |
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| 2 | 2SK2952 |
Toshiba Semiconductor |
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| 3 | 2SK2953 |
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| 4 | 2SK2954-MR |
Fuji Electric |
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| 5 | 2SK2956 |
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Silicon N-Channel MOSFET |
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| 6 | 2SK2956 |
Renesas |
Silicon N-Channel MOSFET |
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| 7 | 2SK2957 |
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Silicon N Channel MOS FET |
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| 8 | 2SK2957 |
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N-Channel MOSFET |
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| 9 | 2SK2957L |
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| 10 | 2SK2957L |
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N-Channel MOSFET |
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Desde 2024. D4U Semiconductor.
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