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2SK270 Silicon N-Channel Transistor Datasheet


2SK270

Toshiba
2SK270
Part Number 2SK270
Manufacturer Toshiba (https://www.toshiba.com/)
Title MOSFET N-CH 450V 7A TO220F
Description 2SK270 SILICON MONOLITHIC N CHANNEL JUNCTION TYPE LOW NOISE AUDIO AND DIFFERENTIAL AMPLIFIER APPLICATIONS. FEATURES . 1 Chip Dual Type. . Re...
Features . 1 Chip Dual Type. . Recommended for First Differential Stages of DC Amplifiers. . Very High Yf I s1 : iYf s l=20mS(Typ.) (VDS=10V, Vgs=0, f=lkHz, I DS S=3mA) . Good Pair Characteristics : lVGSl-VGS2l=30mV(Max.)(VDS=10V, lD=lmA) . High Breakdown Voltage : VGDS=_ 40(Min. . Very Low Nois...

Document Datasheet 2SK270 datasheet pdf (128.92KB)
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Price
3750 units: 2.00647 USD
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2SK2799

Shindengen Electric Mfg.Co.Ltd
2SK2799
Part Number 2SK2799
Manufacturer Shindengen Electric Mfg.Co.Ltd
Title VX-2 Series Power MOSFET
Description SHINDENGEN VX-2 Series Power MOSFET N-Channel Enhancement type 2SK2799 (F10F35VX2) 350V 10A FEATURES •œ Input capacitance (Ciss) is small. Especi.
Features
•œ Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small.
•œ The static Rds(on) is small.
•œ The switching time is fast. APPLICATION
•œ Switching power supply of AC 100V input OUTLINE DIMENSIONS Case : E-pack Case : FTO-220 (Unit : mm)
•œ High voltage power supply .

Document 2SK2799 datasheet pdf


2SK2798

Shindengen Electric Mfg.Co.Ltd
2SK2798
Part Number 2SK2798
Manufacturer Shindengen Electric Mfg.Co.Ltd
Title VX-2 Series Power MOSFET
Description SHINDENGEN VX-2 Series Power MOSFET N-Channel Enhancement type 2SK2798 (F6F35VX2) 350V 6A FEATURES •œ Input capacitance (Ciss) is small. Especial.
Features
•œ Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small.
•œ The static Rds(on) is small.
•œ The switching time is fast. APPLICATION
•œ Switching power supply of AC 100V input OUTLINE DIMENSIONS Case : E-pack Case : FTO-220 (Unit : mm)
•œ High voltage power supply .

Document 2SK2798 datasheet pdf


2SK2796S

Hitachi Semiconductor
2SK2796S
Part Number 2SK2796S
Manufacturer Hitachi Semiconductor
Title Silicon N Channel MOS FET
Description 2SK2796(L), 2SK2796(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-534C (Z) 4th. Edition Jun 1998 Features • Low on-resistance R.
Features
• Low on-resistance R DS(on) = 0.12Ω typ.
• 4V gate drive devices.
• High speed switching Outline DPAK |1 4 4 D 1 2 G 3 S 1 2 3 1. Gate 2. Drain 3. Source 4. Drain 2SK2796(L), 2SK2796(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current .

Document 2SK2796S datasheet pdf


2SK2796L

INCHANGE
2SK2796L
Part Number 2SK2796L
Manufacturer INCHANGE
Title N-Channel MOSFET
Description ·DC/DC Converters ·DC/AC Inverters ·Motor Drives ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 60 .
Features
·Drain Current
  –ID= 16.9A@ TC=25℃
·Drain Source Voltage- : VDSS= 60V(Min)
·Static Drain-Source On-Resistance : RDS(on) = 85mΩ(Max)
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION
·DC/DC Converters
·DC/AC Inverters
·Motor Drives .

Document 2SK2796L datasheet pdf


2SK2796L

Hitachi Semiconductor
2SK2796L
Part Number 2SK2796L
Manufacturer Hitachi Semiconductor
Title Silicon N-Channel MOSFET
Description 2SK2796(L), 2SK2796(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-534C (Z) 4th. Edition Jun 1998 Features • Low on-resistance R.
Features
• Low on-resistance R DS(on) = 0.12Ω typ.
• 4V gate drive devices.
• High speed switching Outline DPAK |1 4 4 D 1 2 G 3 S 1 2 3 1. Gate 2. Drain 3. Source 4. Drain 2SK2796(L), 2SK2796(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current .

Document 2SK2796L datasheet pdf




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