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2SK18A |
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| Part Number | 2SK18A |
| Manufacturer | Toshiba (https://www.toshiba.com/) |
| Description | : SILICON N CHANNEL JUNCTION DUAL TYPE (COMPLETELY SEPARATED TYPE) DIFFERENTIAL AMPLIFIER APPLICATIONS. FEATURES • Low Offset : VgS1"VgS2 =10mV (Max.) • Good Tracking : ^|VGSl-VGS2|/^Ta=20/tV/°C .(Max.). (2SK18A) • High Input Impedance : Ic=-100pA (Max.) at VDs=10V, ID=400yA. • Similar Characteristics as 2SK15. 2SK18 2SK18A CHARACTERISTIC Gate-Drain Voltag. |
| Features |
• Low Offset : VgS1"VgS2 =10mV (Max.) • Good Tracking : ^|VGSl-VGS2|/^Ta=20/tV/°C .(Max.). (2SK18A) • High Input Impedance : Ic=-100pA (Max.) at VDs=10V, ID=400yA. • Similar Characteristics as 2SK15. 2SK18 2SK18A CHARACTERISTIC Gate-Drain Voltage Gate Current Drain Power Dissipation Junction Temperature Storage Temperature Range 1. SOURCE (1) 2. GATE (1) S DRAIN (1) 4, DRA IN (2) 5 OATE (2) 6 SOURCE (2) 7. CASE - SYMBOL VGDS IG PD Tj Tstg RATING -40 10 200 150 -65VL50 UNIT V mA mW °C °C TOSHIBA 2 — 9C 1 A Weight : 0.90g PIN CONNECTION (BOTTOM VIEW) -659- 2SK18 2SK18A ELECTRICAL C. |
| Datasheet |
 2SK18A Data Sheet
PDF 55.10KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SK18 |
Toshiba |
Silicon N-Channel Transistor |
|
| 2 | 2SK180 |
Yoshino International |
Power FET |
|
| 3 | 2SK1803 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 4 | 2SK1803 |
Panasonic |
Silicon N-Channel MOSFET |
|
| 5 | 2SK1805 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 6 | 2SK1805 |
Toshiba |
Field Effect Transistor |
|
| 7 | 2SK1807 |
Hitachi Semiconductor |
N-Channel MOSFET |
|
| 8 | 2SK1807 |
Renesas |
Silicon N-Channel MOSFET |
|
| 9 | 2SK1807 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 10 | 2SK1808 |
Hitachi Semiconductor |
N-Channel MOSFET |
|
Desde 2024. D4U Semiconductor.
|