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2SK1824 N-Channel 20V MOSFET

2SK1824

2SK1824
2SK1824 2SK1824
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Part Number 2SK1824
Manufacturer VBsemi
Description 2SK1824-VB 2SK1824-VB Datasheet N-Channel 20 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.270 at VGS = 4.5 V 20 0.390 at VGS = 2.5 V ID (A) c 0.85 0.70 Qg (TYP.) 1.4 nC D SC-75 G1 G 3D FEATURES • TrenchFET® power MOSFET • 100 % Rg tested APPLICATIONS • Smart phones, tablet PC’s - DC/DC converters - Boost converters - Load switch, OVP switc.
Features
• TrenchFET® power MOSFET
• 100 % Rg tested APPLICATIONS
• Smart phones, tablet PC’s - DC/DC converters - Boost converters - Load switch, OVP switch S2 Top View S www.VBsemi.com ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current (t = 300 μs) Continuous Source-Drain Diode Current Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C TA = 25.
Datasheet Datasheet 2SK1824 Data Sheet
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2SK1824

NEC
2SK1824
Part Number 2SK1824
Manufacturer NEC
Title N-Channel MOSFET
Description DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK1824 N-CHANNEL MOS FET FOR SWITCHING The 2SK1824 is a N-channel vertical type MOS FET that is driven at 2.5 V. Because this MOS FET can be driven on a low voltage and because it is not necessary to consider the drive current, the 2SK1824 is ideal for driv.
Features
• Small mounting area: about 60 % of the conventional mini-mold package (SC-70)
• Can be automatically mounted
• Can be directly driven by 3-V IC 1.0 1.6 ± 0.1 EQUIVALENT CIRCUIT Drain (D) The internal diode in the right figure is a parasitic diode. The protection diode is to protect the product from damage due to static electricity. If there is a danger that an extremely high voltage will be a.


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