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2SJ649 |
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| Part Number | 2SJ649 |
| Manufacturer | NEC |
| Description | The 2SJ649 is P-channel MOS Field Effect Transistor designed for solenoid, motor and lamp driver. ORDERING INFORMATION PART NUMBER 2SJ649 PACKAGE Isolated TO-220 FEATURES • Low on-state resistance: RDS(on)1 = 48 mΩ MAX. (VGS = –10 V, ID = –10 A) RDS(on)2 = 75 mΩ MAX. (VGS = –4.0 V, ID = –10 A) • Low input capacitance: Ciss = 1900 pF TYP. (VDS = –10 V, VGS . |
| Features |
• Low on-state resistance: RDS(on)1 = 48 mΩ MAX. (VGS = –10 V, ID = –10 A) RDS(on)2 = 75 mΩ MAX. (VGS = –4.0 V, ID = –10 A) • Low input capacitance: Ciss = 1900 pF TYP. (VDS = –10 V, VGS = 0 V) • Built-in gate protection diode (Isolated TO-220) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Drain Current (pulse) Note1 VDSS VGSS ID(DC) ID(pulse) PT PT Tch Tstg –60 V V A A W W °C °C A mJ m 20 m 20 m 70 25 2.0 150 –55 to +150 –20 40 Total Power Dissipation (TC = 25°C) Total Power Dissipation (TA = 25. |
| Datasheet |
 2SJ649 Data Sheet
PDF 104.53KB |
| Distributor | Stock | Price | Buy |
|---|
2SJ649 |
| Part Number | 2SJ649 |
| Manufacturer | VBsemi |
| Title | P-Channel MOSFET |
| Description | 2SJ649-VB 2SJ649-VB Datasheet P-Channel 60 V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) () Max. 0.050 at VGS = - 10 V - 60 0.060 at VGS = - 4.5 V ID (A) - 30 - 24 Qg (Typ.) 67 TO-220 FULLPAK FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power. |
| Features |
• Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC S G GDS Top View D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current (TJ = 150 °C) TC = 25 °C TC = 70 °C ID Pulsed Drai. |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SJ643 |
Sanyo Semicon Device |
P CHANNEL MOS SILICON TRANSISTOR |
|
| 2 | 2SJ645 |
Sanyo Semicon Device |
P CHANNEL MOS SILICON TRANSISTOR |
|
| 3 | 2SJ646 |
Sanyo Semicon Device |
General Purpose Switching Device Applications |
|
| 4 | 2SJ647 |
NEC |
MOS FIELD EFFECT TRANSISTOR |
|
| 5 | 2SJ648 |
NEC |
MOS FIELD EFFECT TRANSISTOR |
|
| 6 | 2SJ600 |
NEC |
SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE |
|
| 7 | 2SJ600 |
Kexin |
MOSFET |
|
| 8 | 2SJ601 |
NEC |
P-Channel Power MOSFET |
|
| 9 | 2SJ601 |
Kexin |
MOSFET |
|
| 10 | 2SJ602 |
NEC |
MOS FIELD EFFECT TRANSISTOR |
|
Desde 2024. D4U Semiconductor.
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