Busque con el número de pieza junto con el fabricante o la descripción
| Part Number | 2SD665 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | 2SD665 |
| Manufacturer | INCHANGE |
| Title | NPN Transistor |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V(Min) ·High Current Capability ·Excellent Safe Operating Area ·Complement to Type 2SB645 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier applications. ·Recommended fo. |
| Features | rwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA; IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 10mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A VBE(on) Base-Emitter On Voltage IC= 5A; VCE= 5V ICBO Collector Cutoff Current VCB= 100V; IE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE DC Current Gain . |
similar datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SD661 |
Panasonic Semiconductor |
Silicon NPN Transistor |
|
| 2 | 2SD661 |
Panasonic Semiconductor |
Silicon PNP Transistor |
|
| 3 | 2SD661A |
Panasonic Semiconductor |
Silicon PNP Transistor |
|
| 4 | 2SD661A |
Panasonic Semiconductor |
Silicon NPN Transistor |
|
| 5 | 2SD662 |
Panasonic Semiconductor |
Silicon NPN Transistor |
|
| 6 | 2SD662 |
Panasonic Semiconductor |
Silicon NPN Transistor |
|
| 7 | 2SD662B |
Panasonic Semiconductor |
Silicon NPN Transistor |
|
| 8 | 2SD662B |
Panasonic Semiconductor |
Silicon NPN Transistor |
|
| 9 | 2SD663 |
INCHANGE |
NPN Transistor |
|
| 10 | 2SD664 |
Toshiba |
NPN Transistor |
|
Desde 2024. D4U Semiconductor.
|