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2SD640 |
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| Part Number | 2SD640 |
| Manufacturer | INCHANGE |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V (Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V (Max.)@ IC= 5A ·Excellent Safe Operating Area ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High voltage switching applications. ·High power amplifier applications. ABSOLUTE MAXIMUM RAT. |
| Features | PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 1A VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 1A ICBO Collector Cutoff Current VCB= 500V; IE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE DC Current Gain IC= 1A; VCE= 5V COB Output Capacitance IE= 0; VCB= 50V; ftest= 1.0MHz fT Current-Gain—Bandwidth Product IC= 0.5A; VCE= 10V Switching Times ton Turn-on Time tstg Storage Time IB1= -IB2= 0.3A; VCC= 200V tf Fall Time MIN TYP. MAX UNIT 400 V 1.5 V 2.0 V 0.1 m. |
| Datasheet |
 2SD640 Data Sheet
PDF 194.37KB |
| Distributor | Stock | Price | Buy |
|---|
2SD640 |
| Part Number | 2SD640 |
| Manufacturer | Toshiba |
| Title | Silicon NPN Transistor |
| Description | : 2SD640 I SILICON NPN TRIPLE DIFFUSED TYPE INDUSTRIAL APPLICATIONS HIGH VOLTAGE SWITCHING APPLICATIONS. Unit in mm HIGH POWER AMPLIFIER APPLICATIONS. 025.OMAX. FEATURES • High Voltage : VCEO=400V • Low Saturation Voltage : VCE(sat )=1.5V (Max.) (I C =5A, I B =1A) MAXIMUM RATINGS (Ta=25°C) C. |
| Features |
• High Voltage : VCEO=400V • Low Saturation Voltage : VCE(sat )=1.5V (Max.) (I C =5A, I B =1A) MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power DissipFation (Tc=25°C) Junction Temperature Storage Temperature Range SYMBOL v CBO V CEO v EBO !C IB ?C T i T stg RATING 600 400 5 7 2 100 150 -. |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SD641 |
Toshiba |
Silicon NPN Transistor |
|
| 2 | 2SD641 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 3 | 2SD641 |
INCHANGE |
NPN Transistor |
|
| 4 | 2SD642 |
ETC |
Silicon NPN Transistor |
|
| 5 | 2SD647A |
Toshiba |
Silicon NPN Transistor |
|
| 6 | 2SD648A |
Toshiba |
Silicon NPN Transistor |
|
| 7 | 2SD649 |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
| 8 | 2SD60 |
INCHANGE |
NPN Transistor |
|
| 9 | 2SD600 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistor |
|
| 10 | 2SD600 |
INCHANGE |
NPN Transistor |
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Desde 2024. D4U Semiconductor.
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