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2SD2641 Silicon NPN Triple Diffused Planar Transistor Datasheet


2SD2641

Sanken Electric
2SD2641
2SD2641
Part Number 2SD2641
Manufacturer Sanken (https://www.sanken-ele.co.jp/) Electric
Title TRANS NPN DARL 110V 6A TO3P
Description 2SD2641Darlington Equivalent circuit B C (70Ω) E Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1685) Application : Aud...
Features .1 1.8 5.0±0.2 19.9±0.3 4.0 2.0 20.0min 4.0max a ø3.2±0.1 b 2 3 1.05 +0.2 -0.1 0.65 +0.2 -0.1 5.45±0.1 5.45±0.1 BCE 1.4 Weight : Approx 6.0g a. Part No. b. Lot No. DC Current Gain hFE Collector Current IC(A) 5mA 1mA I C
  – V CE Characteristics (Typical) 6 0.5mA 0.4mA 0.3mA 4 0....

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2SD2649

Sanyo Semicon Device
2SD2649
Part Number 2SD2649
Manufacturer Sanyo Semicon Device
Title NPN Triple Diffused Planar Silicon Transistor
Description Ordering number : ENN6679A 2SD2649 NPN Triple Diffused Planar Silicon Transistor 2SD2649 Color TV Horizontal Deflection Output Applications Feat.
Features
• High speed.
• High breakdown voltage(VCBO=1500V).
• High reliability(Adoption of HVP process).
• Adoption of MBIT process. Package Dimensions unit : mm 2174A [2SD2649] 16.0 3.4 5.6 3.1 22.0 8.0 0.8 21.0 5.0 4.0 2.8 2.0 2.1 0.7 0.9 20.4 12 3 5.45 3.5 1 : Base 2 : Collector 3 : Emitter S.

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2SD2648

Sanyo Semicon Device
2SD2648
Part Number 2SD2648
Manufacturer Sanyo Semicon Device
Title NPN Triple Diffused Planar Silicon Transistor
Description Ordering number : ENN6923 2SD2648 NPN Triple Diffused Planar Silicon Transistor 2SD2648 Color TV Horizontal Deflection Output Applications Featu.
Features



• Package Dimensions unit : mm 2174A [2SD2648] 16.0 5.0 High speed. High breakdown voltage(VCBO=1500V). High reliability(Adoption of HVP process). Adoption of MBIT process. 3.4 5.6 3.1 8.0 22.0 21.0 4.0 2.8 2.0 20.4 0.7 0.9 1 2 5.45 3 Specifications Absolute Maximum Ratings at Ta=2.

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2SD2646

Sanyo Semicon Device
2SD2646
Part Number 2SD2646
Manufacturer Sanyo Semicon Device
Title NPN Triple Diffused Planar Silicon Transistor
Description Ordering number : ENN6922 2SD2646 NPN Triple Diffused Planar Silicon Transistor 2SD2646 Color TV Horizontal Deflection Output Applications Featu.
Features



• Package Dimensions unit : mm 2174A [2SD2646] 16.0 5.0 High speed. High breakdown voltage(VCBO=1500V). High reliability(Adoption of HVP process). Adoption of MBIT process. 3.4 5.6 3.1 8.0 22.0 21.0 4.0 2.8 2.0 20.4 0.7 0.9 1 2 5.45 3 Specifications Absolute Maximum Ratings at Ta=2.

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2SD2645

INCHANGE
2SD2645
Part Number 2SD2645
Manufacturer INCHANGE
Title NPN Transistor
Description ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·High Reliability ·Built-in Damper Diode ·Minimum Lot-to-Lot variations for rob.
Features VCE(sat) Collector-Emitter Saturation Voltage IC= 7.2A; IB= 1.44A VBE(sat) Base-Emitter Saturation Voltage IC= 7.2A; IB= 1.44A ICBO Collector Cutoff Current VCB= 800V; IE= 0 ICES Collector Cutoff Current VCE= 1500V; RBE= 0 IEBO Emitter Cutoff Current VEB= 4V; IC= 0 hFE-1 DC Current Gain.

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2SD2645

Sanyo Semicon Device
2SD2645
Part Number 2SD2645
Manufacturer Sanyo Semicon Device
Title NPN Transistor
Description Ordering number : ENN6897A 2SD2645 NPN Triple Diffused Planar Silicon Transistor 2SD2645 Color TV Horizontal Deflection Output Applications Feat.
Features




• Package Dimensions unit : mm 2174A [2SD2645] 16.0 5.0 3.4 5.6 3.1 8.0 22.0 High speed. High breakdown voltage(VCBO=1500V). High reliability(Adoption of HVP process). Adoption of MBIT process. On-chip damper diode. 21.0 4.0 2.8 2.0 20.4 0.7 0.9 1 2 5.45 3 3.5 0.8 2.1 Specifications.

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