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2SD261 Transistors Datasheet


2SD261

ETC
2SD261
Part Number 2SD261
Manufacturer ETC
Title Board to Board & Mezzanine Connectors
Description Transistors 2SD261 ...
Features ...

Document Datasheet 2SD261 datasheet pdf (72.28KB)
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2SD2696

Rohm
2SD2696
Part Number 2SD2696
Manufacturer Rohm
Title Low frequency transistor
Description www.DataSheet4U.com 2SD2696 Transistors Low frequency transistor (for amplification) 2SD2696 zStructure NPN Silicon Epitaxial Planar Transistor .
Features 1) The transistor of 400mA class which went only with 2012 size conventionally is attained in 1208 size. 2) Collector saturation voltage is low. VCE (sat) : max. 300mA at IC = 100mA / IB = 2mA (1) Base (2) Emitter (3) Collector (3) 0.2 0.22 (1)(2) 0.8 1.2 0.4 0.4 0.8 0.13 0.5 Abbreviated symbol.

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2SD2693A

Panasonic Semiconductor
2SD2693A
Part Number 2SD2693A
Manufacturer Panasonic Semiconductor
Title Silicon NPN triple diffusion planar type Transistor
Description www.DataSheet4U.com Power Transistors 2SD2693A Silicon NPN triple diffusion planar type Unit: mm For power amplification ■ Features • Wide safe.
Features
• Wide safe oeration area
• Satisfactory linearity of forward current transfer ratio hFE
• Low collector-emitter saturation voltage VCE(sat)
• Full-pack package which can be installed to the heat sink with one screw. 9.9±0.3 3.0±0.5 4.6±0.2 2.9±0.2 13.7±0.2 4.2±0.2 Solder Dip 15.0±0.5 φ 3.2±0.1.

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2SD2693

Panasonic Semiconductor
2SD2693
Part Number 2SD2693
Manufacturer Panasonic Semiconductor
Title Power Transistors
Description This product complies with the RoHS Directive (EU 2002/95/EC). Power Transistors 2SD2693, 2SD2693A Silicon NPN triple diffusion planar type For .
Features
• Wide safe oeration area
• Satisfactory linearity of forward current transfer ratio hFE
• Low collector-emitter saturation voltage VCE(sat)
• Full-pack package which can be installed to the heat sink with one screw. 15.0±0.5 Unit: mm 9.9±0.3 3.0±0.5 4.6±0.2 2.9±0.2 φ 3.2±0.1 13.7±0.2 4.2±0.2 So.

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2SD2689LS

Sanyo Semicon Device
2SD2689LS
Part Number 2SD2689LS
Manufacturer Sanyo Semicon Device
Title NPN Triple Diffused Planar Silicon Transistor
Description Ordering number : ENN7527 2SD2689LS NPN Triple Diffused Planar Silicon Transistor 2SD2689LS Color TV Horizontal Deflection Output Applications F.
Features



• Package Dimensions unit : mm 2079D [2SD2689LS] 10.0 3.2 3.5 7.2 High speed. High breakdown voltage(VCBO=1500V). High reliability(Adoption of HVP process). Adoption of MBIT process. 4.5 2.8 16.1 16.0 3.6 0.9 1.2 14.0 1.2 0.75 1 2 3 0.7 Specifications Absolute Maximum Ratings at T.

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2SD2689

Inchange Semiconductor
2SD2689
Part Number 2SD2689
Manufacturer Inchange Semiconductor
Title Silicon NPN Power Transistor
Description ·High speed. ·High breakdown voltage(VCBO=1500V). ·High reliability(Adoption of HVP process). ·Minimum Lot-to-Lot variations for robust device per.
Features ltage IC= 50mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 7.2A; IB= 1.44A VBE(sat) Base-Emitter Saturation Voltage IC= 7.2A; IB= 1.44A ICBO Collector Cutoff Current VCB= 800V ; IE= 0 ICES Collector Cutoff Current VCE=1500V ; RBE= 0 IEBO Emitter Cutoff Current VEB= 4V; IC= .

Document 2SD2689 datasheet pdf



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