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| Part Number | 2SD2583 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | 2SD2583 |
| Manufacturer | NEC |
| Title | NPN Transistor |
| Description | DATA SHEET SILICON TRANSISTOR 2SD2583 AUDIO FREQUENCY AMPLIFIER, SWITCHING NOPN SILICON EPITAXIAL TRANSISTORS FEATURES • Low VCE(sat) VCE(sat) = 0.15 V Max (@lC/lB = 1.0 A/50 mA) • High DC Current Gain hEF = 150 to 600 (@VCE = 2.0 V, lC = 1.0 A) PACKAGE DIMENSIONS in millimeters (inches) 8.5 MAX.. |
| Features |
• Low VCE(sat) VCE(sat) = 0.15 V Max (@lC/lB = 1.0 A/50 mA) • High DC Current Gain hEF = 150 to 600 (@VCE = 2.0 V, lC = 1.0 A) PACKAGE DIMENSIONS in millimeters (inches) 8.5 MAX. 2.8 MAX. (0.334 MAX.) (0.110 MAX.) φ 3.2 ± 0.2 ( φ 0.126) 12.0 MAX. (0.472 MAX.) Maximum Voltage and Current (TA = 25 °C) Collector to Base Voltage Collector to Emitter Volteage Emitter to Base Voltage Collector Current. |
| Part Number | 2SD2583 |
| Manufacturer | BLUE ROCKET ELECTRONICS |
| Title | Silicon NPN transistor |
| Description | TO-126F NPN 。Silicon NPN transistor in a TO-126F Plastic Package. / Features ；。 Low saturation voltage, high DC current gain. / Applications 。 Audio frequency amplifier and switching applications. / Equivalent Circuit / Pinning 12 3 PIN1：Emitter PIN 2：Collector PIN 3：Base / hFE . |
| Features | ；。 Low saturation voltage, high DC current gain. / Applications 。 Audio frequency amplifier and switching applications. / Equivalent Circuit / Pinning 12 3 PIN1：Emitter PIN 2：Collector PIN 3：Base / hFE Classifications & Marking 。See Marking Instructions. http://www.fsbrec.com 1/6 2SD2583 Rev.E Mar.-2016 / Absolute Maximum Ratings(Ta=25℃) Parameter Collector to Base Voltage Col. |
| Part Number | 2SD2583 |
| Manufacturer | Inchange Semiconductor |
| Title | Silicon NPN Power Transistor |
| Description | ·High Collector Current-IC= 5A ·Low Saturation Voltage - : VCE(sat)= 0.15V(Max)@ IC=1A, IB= 50mA ·High DC Current Gain- : hFE= 150~600@ IC= 1A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio frequency amplifier and switching appli. |
| Features | RAMETER CONDITIONS VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 1A; IB= 50mA VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 2A; IB= 0.1A VCE(sat)-3 Collector-Emitter Saturation Voltage IC= 4A; IB= 0.2A VBE(sat) Base-Emitter Saturation Voltage IC= 2A; IB= 0.1A ICBO Collector Cutoff Current VCB= 30V; IE= 0 IEBO Emitter Cutoff Current VEB= 6V; IC= 0 hFE-1 DC Current Gain IC. |
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