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| Distributor | Stock | Price | Buy |
|---|
2SD2400 |
| Part Number | 2SD2400 |
| Manufacturer | INCHANGE |
| Title | NPN Transistor |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V (Min) ·Wide Area of Safe Operation ·Complement to Type 2SB1569 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T. |
| Features | n Voltage IC= 1mA; IB= 0 120 V V(BR)CBO Collector-Base Breakdown Voltage IC= 50μA; IE= 0 120 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 50μA; IC= 0 5 V VCE(sat) Collector-Emitter Saturation Voltage IC= 1A; IB= 0.1A 2.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 1A; IB= 0.1A 1.5 V ICBO Collector Cutoff Current VCB= 100V; IE= 0 1.0 μA IEBO Emitter Cutoff Current VEB= 4. |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SD2400A |
Rohm |
Power Transistor |
|
| 2 | 2SD2401 |
Sanken electric |
Silicon NPN Transistor |
|
| 3 | 2SD2401 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 4 | 2SD2401 |
INCHANGE |
NPN Transistor |
|
| 5 | 2SD2402 |
NEC |
NPN SILICON EPITAXIAL TRANSISTOR |
|
| 6 | 2SD2403 |
Renesas |
NPN Transistor |
|
| 7 | 2SD2406 |
Toshiba Semiconductor |
Silicon NPN Transistor |
|
| 8 | 2SD2406 |
INCHANGE |
NPN Transistor |
|
| 9 | 2SD2407 |
Panasonic |
NPN Transistor |
|
| 10 | 2SD2413 |
HOTTECH |
GENERAL PURPOSE TRANSISTOR |
|
Desde 2024. D4U Semiconductor.
|