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| Part Number | 2SD2390 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | 2SD2390 |
| Manufacturer | INCHANGE |
| Title | NPN Transistor |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 150V(Min) ·High DC Current Gain- : hFE= 5000( Min.) @(IC= 7A, VCE= 4V) ·Low Collector Saturation Voltage- : VCE(sat)= 2.5V(Max)@ (IC= 7A, IB= 7mA) ·Complement to Type 2SB1560 ·Minimum Lot-to-Lot variations for robust device performance and reliable o. |
| Features | se specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 7A; IB= 7mA VBE(sat) Base-Emitter Saturation Voltage IC= 7A; IB= 7mA ICBO Collector Cutoff Current VCB= 160V; IE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE DC Current Gain IC= 7A; VCE= 4V COB Output Capacitance IE= 0; VCB. |
| Part Number | 2SD2390 |
| Manufacturer | Sanken electric |
| Title | Silicon NPN Transistor |
| Description | 2SD2390 Darlington Equivalent circuit C B (70Ω) E Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1560) Application : Audio, Series Regulator and General Purpose sAbsolute maximum ratings (Ta=25°C) sElectrical Characteristics (Ta=25°C) Symbol Ratings Unit VCBO 160 V . |
| Features |
1.8 5.0±0.2
4.0
19.9±0.3
20.0min 4.0max
a
ø3.2±0.1
b
2
3
1.05
+0.2 -0.1
0.65
+0.2 -0.1
5.45±0.1
5.45±0.1
1.4
BCE
Weight : Approx 2.0g
a. Part No.
b. Lot No.
Collector Current IC(A) 10mA 2.5mA
I C – V CE Characteristics (Typical) 10 2mA 1.5mA 8 1.2mA 1mA 6 0.8mA 4 0.6mA IB=0.4mA 2 0 0 2 4 6 Collector-Emitter Voltage VCE(V) Collector-Emitter Saturation Voltage . |
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Desde 2024. D4U Semiconductor.
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