Busque con el número de pieza junto con el fabricante o la descripción
| Part Number | 2SD2349 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | 2SD2349 |
| Manufacturer | INCHANGE |
| Title | NPN Transistor |
| Description | ·High Breakdown Voltage- : VCBO= 1500V (Min) ·Low Saturation Voltage ·High Switching Speed ·Built-in Damper Diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for horizontal output applicaitions ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL . |
| Features | UNIT V(BR)EBO Emitter-Base Breakdown Voltage IE= 300mA ; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 7A; IB= 1.4A VBE(sat) Base-Emitter Saturation Voltage IC= 7A; IB= 1.4A ICBO Collector Cutoff Current VCB= 1500V; IE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE-1 DC Current Gain IC= 1A ; VCE= 5V hFE-2 DC Current Gain IC= 7A ; VCE= 5V VECF C-E Diode Forward Volt. |
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Desde 2024. D4U Semiconductor.
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